2SA1235
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1235
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar 2SA1235
2SA1235
Datasheet (PDF)
..1. Size:1150K kexin
2sa1235.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1235SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesSmall collector to emitter saturation voltage.1 2+0.1Excelent lineary DC forward current gain. +0.050.95-0.1 0.1-0.01+0.11.9-0.1Super mini package for easy mounting.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Un
0.1. Size:103K secos
2sa1235a.pdf
2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Collector Current A Low Collector Power Dissipation L33Top View C BCLASSIFICATION OF hFE (1) 11 22Product-Rank 2SA1235A-ME 2SA1235A-MF K ERange 150~300 250~500DMa
0.2. Size:313K hua-yuan
2sa1235a.pdf
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT23 1. BASE 2SA1235A TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2.4 PCM : 0.2 WTamb=25 1.3 Collector current ICM: -0.2 A Collector-base voltage V
0.3. Size:748K jiangsu
2sa1235a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SA1235A TRANSISTOR (PNP)SOT23 FEATURES Low Collector Current Low Collector Power DissipationMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage -60 V CBO3. COLLECTORV Collector-Emitter Voltage -50 V C
0.4. Size:294K htsemi
2sa1235a.pdf
2SA1 235ATRANSISTOR(PNP)SOT23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -60 V 3. COLLECTOR V Collector-Emitter Voltage -50 V CEOV Emitter-Base Voltage -6 V EBOI Collector Current -200 mA CP Collector Powe
0.5. Size:967K lrc
l2sa1235flt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, L2SA1235FLT1Git is designed for low frequency voltage application.S-L2SA1235FLT1G . FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @I c=-100mA, I B=-10mA)3Excellent linearity of DC forward current gain.
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