All Transistors. 2SA1235 Datasheet

 

2SA1235 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1235
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO236

 2SA1235 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1235 Datasheet (PDF)

 ..1. Size:1150K  kexin
2sa1235.pdf

2SA1235
2SA1235

SMD Type orSMD Type TransistICsPNP Transistors2SA1235SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesSmall collector to emitter saturation voltage.1 2+0.1Excelent lineary DC forward current gain. +0.050.95-0.1 0.1-0.01+0.11.9-0.1Super mini package for easy mounting.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

 0.1. Size:103K  secos
2sa1235a.pdf

2SA1235

2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Collector Current A Low Collector Power Dissipation L33Top View C BCLASSIFICATION OF hFE (1) 11 22Product-Rank 2SA1235A-ME 2SA1235A-MF K ERange 150~300 250~500DMa

 0.2. Size:313K  hua-yuan
2sa1235a.pdf

2SA1235
2SA1235

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT23 1. BASE 2SA1235A TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2.4 PCM : 0.2 WTamb=25 1.3 Collector current ICM: -0.2 A Collector-base voltage V

 0.3. Size:748K  jiangsu
2sa1235a.pdf

2SA1235
2SA1235

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SA1235A TRANSISTOR (PNP)SOT23 FEATURES Low Collector Current Low Collector Power DissipationMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage -60 V CBO3. COLLECTORV Collector-Emitter Voltage -50 V C

 0.4. Size:294K  htsemi
2sa1235a.pdf

2SA1235

2SA1 235ATRANSISTOR(PNP)SOT23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -60 V 3. COLLECTOR V Collector-Emitter Voltage -50 V CEOV Emitter-Base Voltage -6 V EBOI Collector Current -200 mA CP Collector Powe

 0.5. Size:967K  lrc
l2sa1235flt1g.pdf

2SA1235
2SA1235

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, L2SA1235FLT1Git is designed for low frequency voltage application.S-L2SA1235FLT1G . FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @I c=-100mA, I B=-10mA)3Excellent linearity of DC forward current gain.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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