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BCM856DS-DG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCM856DS-DG
   Código: R9
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 2.2 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT457
 

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BCM856DS-DG Datasheet (PDF)

 ..1. Size:642K  nxp
bcm856bs bcm856bs-dg bcm856ds bcm856ds-dg.pdf pdf_icon

BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNexperia JEITA

 6.1. Size:104K  philips
bcm856bs bcm856ds.pdf pdf_icon

BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM

 6.2. Size:104K  nxp
bcm856bs bcm856ds.pdf pdf_icon

BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM

 8.1. Size:542K  infineon
bcm856s.pdf pdf_icon

BCM856DS-DG

BCM856SPNP Silicon AF Transistor Array Precision matched transistor pair: IC 10%453 For current mirror applications621 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S BC856S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualif

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History: RS7223 | KRC285U | 2N6354 | RN2962CT | ET405 | 3DD5038P | FJP5200

 

 
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