All Transistors. BCM856DS-DG Datasheet

 

BCM856DS-DG Datasheet and Replacement


   Type Designator: BCM856DS-DG
   SMD Transistor Code: R9
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT457
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BCM856DS-DG Datasheet (PDF)

 ..1. Size:642K  nxp
 bcm856bs bcm856bs-dg bcm856ds bcm856ds-dg.pdf pdf_icon

BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNexperia JEITA

 6.1. Size:104K  philips
 bcm856bs bcm856ds.pdf pdf_icon

BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM

 6.2. Size:104K  nxp
 bcm856bs bcm856ds.pdf pdf_icon

BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM

 8.1. Size:542K  infineon
 bcm856s.pdf pdf_icon

BCM856DS-DG

BCM856SPNP Silicon AF Transistor Array Precision matched transistor pair: IC 10%453 For current mirror applications621 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S BC856S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualif

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCP5210 | BC860B | BCP69-16 | BCR108S | BCP53-10T1G | TP5550R | BD696A

Keywords - BCM856DS-DG transistor datasheet

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 BCM856DS-DG equivalent finder
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