All Transistors. BCM856DS-DG Datasheet

 

BCM856DS-DG Datasheet, Equivalent, Cross Reference Search


   Type Designator: BCM856DS-DG
   SMD Transistor Code: R9
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT457

 BCM856DS-DG Transistor Equivalent Substitute - Cross-Reference Search

   

BCM856DS-DG Datasheet (PDF)

 ..1. Size:642K  nxp
bcm856bs bcm856bs-dg bcm856ds bcm856ds-dg.pdf

BCM856DS-DG BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNexperia JEITA

 6.1. Size:104K  philips
bcm856bs bcm856ds.pdf

BCM856DS-DG BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM

 6.2. Size:104K  nxp
bcm856bs bcm856ds.pdf

BCM856DS-DG BCM856DS-DG

BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM

 8.1. Size:542K  infineon
bcm856s.pdf

BCM856DS-DG BCM856DS-DG

BCM856SPNP Silicon AF Transistor Array Precision matched transistor pair: IC 10%453 For current mirror applications621 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S BC856S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualif

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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