BFU725F-N1 Todos los transistores

 

BFU725F-N1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFU725F-N1
   Código: B7*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.136 W
   Tensión colector-base (Vcb): 10 V
   Tensión colector-emisor (Vce): 2.8 V
   Tensión emisor-base (Veb): 1 V
   Corriente del colector DC máxima (Ic): 0.04 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 55000 MHz
   Capacitancia de salida (Cc): 70 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT343F

 Búsqueda de reemplazo de transistor bipolar BFU725F-N1

 

BFU725F-N1 Datasheet (PDF)

 ..1. Size:136K  nxp
 bfu725f-n1.pdf pdf_icon

BFU725F-N1

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost

 7.1. Size:73K  philips
 bfu725f n1.pdf pdf_icon

BFU725F-N1

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic

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History: ACY23V

 

 
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