BFU725F-N1 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU725F-N1
SMD Transistor Code: B7*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.136 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 2.8 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 55000 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT343F
BFU725F-N1 Transistor Equivalent Substitute - Cross-Reference Search
BFU725F-N1 Datasheet (PDF)
bfu725f-n1.pdf
BFU725F/N1NPN wideband silicon germanium RF transistorRev. 2 3 November 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost
bfu725f n1.pdf
BFU725F/N1NPN wideband silicon germanium RF transistorRev. 01 13 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in aplastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handlingelectrostatic
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
