All Transistors. BFU725F-N1 Datasheet

 

BFU725F-N1 Datasheet and Replacement


   Type Designator: BFU725F-N1
   SMD Transistor Code: B7*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.136 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 2.8 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 55000 MHz
   Collector Capacitance (Cc): 70 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT343F
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BFU725F-N1 Datasheet (PDF)

 ..1. Size:136K  nxp
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BFU725F-N1

BFU725F/N1NPN wideband silicon germanium RF transistorRev. 2 3 November 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost

 7.1. Size:73K  philips
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BFU725F-N1

BFU725F/N1NPN wideband silicon germanium RF transistorRev. 01 13 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in aplastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handlingelectrostatic

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: 2SC999A | 2N6291 | MJE171 | 2N1056 | UN9217R | KT8107D2 | ECG2306

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