BFU725F-N1 Datasheet and Replacement
Type Designator: BFU725F-N1
SMD Transistor Code: B7*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.136 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 2.8 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 55000 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT343F
BFU725F-N1 Transistor Equivalent Substitute - Cross-Reference Search
BFU725F-N1 Datasheet (PDF)
bfu725f-n1.pdf
BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost... See More ⇒
bfu725f n1.pdf
BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic... See More ⇒
Datasheet: BCX54-16T , BCX54T , BCX55-10T , BCX55-16T , BCX55T , BCX56-10T , BCX56-16T , BCX56T , 2SC2383 , MJD31CA , MJD44H11A , NMB2227A , PBHV8115TLH , PBHV8515QA , PBHV9115TLH , PBHV9540X , PBSS2515MB .
History: GET874 | 2N5583LP | 2S31 | KMS3 | 2SD415 | 2SB934
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History: GET874 | 2N5583LP | 2S31 | KMS3 | 2SD415 | 2SB934
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