PBHV8515QA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBHV8515QA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.325 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 75 MHz

Capacitancia de salida (Cc): 2.4 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT1215

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PBHV8515QA datasheet

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PBHV8515QA

PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBHV9515QA. 2. Features and benefits

 8.1. Size:108K  philips
 pbhv8540t.pdf pdf_icon

PBHV8515QA

PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040T. 1.2 Features High voltage Low collector-emitter sa

 8.2. Size:236K  nxp
 pbhv8540x.pdf pdf_icon

PBHV8515QA

PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040X. 2. Features and benefits High voltage Low collector-emitter

 8.3. Size:120K  nxp
 pbhv8540z.pdf pdf_icon

PBHV8515QA

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040Z. 1.2 Features High voltage Low collector-emitt

MOSTRAR MÁS

Otros transistores... BCX56-10T, BCX56-16T, BCX56T, BFU725F-N1, MJD31CA, MJD44H11A, NMB2227A, PBHV8115TLH, 2SC828, PBHV9115TLH, PBHV9540X, PBSS2515MB, PBSS4160X, PBSS4220PANS, PBSS4260PANS, PBSS4360PAS, PBSS4360X