PBHV8515QA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBHV9515QA. 2. Features and benefits

PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040T. 1.2 Features High voltage Low collector-emitter sa

PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040X. 2. Features and benefits High voltage Low collector-emitter

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040Z. 1.2 Features High voltage Low collector-emitt

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9560Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat Hi