PBHV8515QA Datasheet. Specs and Replacement

Type Designator: PBHV8515QA

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.325 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 2.4 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT1215

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PBHV8515QA datasheet

 ..1. Size:724K  nxp

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PBHV8515QA

PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBHV9515QA. 2. Features and benefits ... See More ⇒

 8.1. Size:108K  philips

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PBHV8515QA

PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040T. 1.2 Features High voltage Low collector-emitter sa... See More ⇒

 8.2. Size:236K  nxp

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PBHV8515QA

PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040X. 2. Features and benefits High voltage Low collector-emitter... See More ⇒

 8.3. Size:120K  nxp

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PBHV8515QA

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040Z. 1.2 Features High voltage Low collector-emitt... See More ⇒

Detailed specifications: BCX56-10T, BCX56-16T, BCX56T, BFU725F-N1, MJD31CA, MJD44H11A, NMB2227A, PBHV8115TLH, 2SC828, PBHV9115TLH, PBHV9540X, PBSS2515MB, PBSS4160X, PBSS4220PANS, PBSS4260PANS, PBSS4360PAS, PBSS4360X

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