All Transistors. PBHV8515QA Datasheet

 

PBHV8515QA Datasheet and Replacement


   Type Designator: PBHV8515QA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.325 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 2.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT1215
 

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PBHV8515QA Datasheet (PDF)

 ..1. Size:724K  nxp
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PBHV8515QA

PBHV8515QA150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor19 November 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic packagewith visible and solderable side pads.PNP complement: PBHV9515QA.2. Features and benefits

 8.1. Size:108K  philips
pbhv8540t.pdf pdf_icon

PBHV8515QA

PBHV8540T500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 14 January 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040T.1.2 Features High voltage Low collector-emitter sa

 8.2. Size:236K  nxp
pbhv8540x.pdf pdf_icon

PBHV8515QA

PBHV8540X500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor5 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040X.2. Features and benefits High voltage Low collector-emitter

 8.3. Size:120K  nxp
pbhv8540z.pdf pdf_icon

PBHV8515QA

PBHV8540Z500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040Z.1.2 Features High voltage Low collector-emitt

Datasheet: BCX56-10T , BCX56-16T , BCX56T , BFU725F-N1 , MJD31CA , MJD44H11A , NMB2227A , PBHV8115TLH , B647 , PBHV9115TLH , PBHV9540X , PBSS2515MB , PBSS4160X , PBSS4220PANS , PBSS4260PANS , PBSS4360PAS , PBSS4360X .

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