All Transistors. PBHV8515QA Datasheet

 

PBHV8515QA Datasheet and Replacement


   Type Designator: PBHV8515QA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.325 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 2.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT1215
      - BJT Cross-Reference Search

   

PBHV8515QA Datasheet (PDF)

 ..1. Size:724K  nxp
pbhv8515qa.pdf pdf_icon

PBHV8515QA

PBHV8515QA150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor19 November 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic packagewith visible and solderable side pads.PNP complement: PBHV9515QA.2. Features and benefits

 8.1. Size:108K  philips
pbhv8540t.pdf pdf_icon

PBHV8515QA

PBHV8540T500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 14 January 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040T.1.2 Features High voltage Low collector-emitter sa

 8.2. Size:236K  nxp
pbhv8540x.pdf pdf_icon

PBHV8515QA

PBHV8540X500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor5 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040X.2. Features and benefits High voltage Low collector-emitter

 8.3. Size:120K  nxp
pbhv8540z.pdf pdf_icon

PBHV8515QA

PBHV8540Z500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040Z.1.2 Features High voltage Low collector-emitt

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: MJE13001A0 | KT686J | TIP34AF | ZXTD617MC | HSBD238 | CMUT3410 | SML5321

Keywords - PBHV8515QA transistor datasheet

 PBHV8515QA cross reference
 PBHV8515QA equivalent finder
 PBHV8515QA lookup
 PBHV8515QA substitution
 PBHV8515QA replacement

 

 
Back to Top

 


 
.