PBHV9115TLH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBHV9115TLH
Código: FC*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 55 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SOT23
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PBHV9115TLH Datasheet (PDF)
pbhv9115tlh.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv9115t.pdf
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PBHV9115T150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115T.1.2 Features High voltage Low collector-emitter satur
pbhv9115x.pdf
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PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat
pbhv9115z.pdf
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PBHV9115Z150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115Z.1.2 Features High voltage Low collector-emitter
pbhv9115x.pdf
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PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat
pbhv9115z.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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