PBHV9115TLH - Даташиты. Аналоги. Основные параметры
Наименование производителя: PBHV9115TLH
Маркировка: FC*
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 55 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: SOT23
Аналоги (замена) для PBHV9115TLH
PBHV9115TLH Datasheet (PDF)
pbhv9115tlh.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv9115t.pdf
PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T. 1.2 Features High voltage Low collector-emitter satur
pbhv9115x.pdf
PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat
pbhv9115z.pdf
PBHV9115Z 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115Z. 1.2 Features High voltage Low collector-emitter
Другие транзисторы... BCX56-16T , BCX56T , BFU725F-N1 , MJD31CA , MJD44H11A , NMB2227A , PBHV8115TLH , PBHV8515QA , 431 , PBHV9540X , PBSS2515MB , PBSS4160X , PBSS4220PANS , PBSS4260PANS , PBSS4360PAS , PBSS4360X , PBSS5220PAPS .
History: TN3725 | NA01EI | TA2307
History: TN3725 | NA01EI | TA2307
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