All Transistors. PBHV9115TLH Datasheet

 

PBHV9115TLH Datasheet and Replacement


   Type Designator: PBHV9115TLH
   SMD Transistor Code: FC*
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 55 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
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PBHV9115TLH Datasheet (PDF)

 ..1. Size:413K  nxp
 pbhv9115tlh.pdf pdf_icon

PBHV9115TLH

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:111K  nxp
 pbhv9115t.pdf pdf_icon

PBHV9115TLH

PBHV9115T150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115T.1.2 Features High voltage Low collector-emitter satur

 6.1. Size:155K  philips
 pbhv9115x.pdf pdf_icon

PBHV9115TLH

PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat

 6.2. Size:129K  philips
 pbhv9115z.pdf pdf_icon

PBHV9115TLH

PBHV9115Z150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115Z.1.2 Features High voltage Low collector-emitter

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