PBHV9540X
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBHV9540X
Código: *4H
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.52
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 65
MHz
Capacitancia de salida (Cc): 14
pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar PBHV9540X
PBHV9540X
Datasheet (PDF)
..1. Size:228K nxp
pbhv9540x.pdf 
PBHV9540X400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor28 September 2017 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62)medium power and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540X2. Features and benefits High voltage Low collector-emitte
6.1. Size:149K philips
pbhv9540z.pdf
PBHV9540Z500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8140Z.1.2 Features High voltage Low collector-emi
6.2. Size:266K nxp
pbhv9540z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.1. Size:211K nxp
pbhv9560z.pdf
PBHV9560Z600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor12 August 2014 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8560Z2. Features and benefits High voltage Low collector-emitter saturation vol
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