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PBHV9540X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBHV9540X
   Código: *4H
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.52 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 65 MHz
   Capacitancia de salida (Cc): 14 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: SOT89

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PBHV9540X Datasheet (PDF)

 ..1. Size:228K  nxp
pbhv9540x.pdf

PBHV9540X PBHV9540X

PBHV9540X400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor28 September 2017 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62)medium power and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540X2. Features and benefits High voltage Low collector-emitte

 6.1. Size:149K  philips
pbhv9540z.pdf

PBHV9540X PBHV9540X

PBHV9540Z500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8140Z.1.2 Features High voltage Low collector-emi

 6.2. Size:266K  nxp
pbhv9540z.pdf

PBHV9540X PBHV9540X

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:211K  nxp
pbhv9560z.pdf

PBHV9540X PBHV9540X

PBHV9560Z600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor12 August 2014 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8560Z2. Features and benefits High voltage Low collector-emitter saturation vol

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