PBHV9540X Datasheet. Specs and Replacement

Type Designator: PBHV9540X

SMD Transistor Code: *4H

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.52 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SOT89

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PBHV9540X datasheet

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PBHV9540X

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

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PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8560Z 2. Features and benefits High voltage Low collector-emitter saturation vol... See More ⇒

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Detailed specifications: BCX56T, BFU725F-N1, MJD31CA, MJD44H11A, NMB2227A, PBHV8115TLH, PBHV8515QA, PBHV9115TLH, S9018, PBSS2515MB, PBSS4160X, PBSS4220PANS, PBSS4260PANS, PBSS4360PAS, PBSS4360X, PBSS5220PAPS, PBSS5250TH

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