PBHV9540X - Даташиты. Аналоги. Основные параметры

PBHV9540X 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 28 September 2017 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540X 2. Features and benefits High voltage Low collector-emitte

PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8140Z. 1.2 Features High voltage Low collector-emi

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8560Z 2. Features and benefits High voltage Low collector-emitter saturation vol