PBSS4260PANS
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4260PANS
Código: 3L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.37
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Capacitancia de salida (Cc): 6.5
pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT1118D
Búsqueda de reemplazo de transistor bipolar PBSS4260PANS
PBSS4260PANS
Datasheet (PDF)
..1. Size:734K nxp
pbss4260pans.pdf
PBSS4260PANS60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor15 December 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.PNP/PNP complement: PBSS5260PAPS2. Features and benefits
3.1. Size:249K nxp
pbss4260pan.pdf
PBSS4260PAN60 V, 2 A NPN/NPN low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect
3.2. Size:340K nxp
pbss4260panp.pdf
PBSS4260PANP60 V, 2 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect
6.1. Size:244K nxp
pbss4260qa.pdf
PBSS4260QA60 V, 2 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5260QA.2. Features and benefits Very low collector-emitter
Otros transistores... 2N3200
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.