PBSS4260PANS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4260PANS
Código: 3L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.37 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT1118D
Búsqueda de reemplazo de PBSS4260PANS
PBSS4260PANS Datasheet (PDF)
pbss4260pans.pdf

PBSS4260PANS60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor15 December 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.PNP/PNP complement: PBSS5260PAPS2. Features and benefits
pbss4260pan.pdf

PBSS4260PAN60 V, 2 A NPN/NPN low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect
pbss4260panp.pdf

PBSS4260PANP60 V, 2 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect
pbss4260qa.pdf

PBSS4260QA60 V, 2 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5260QA.2. Features and benefits Very low collector-emitter
Otros transistores... NMB2227A , PBHV8115TLH , PBHV8515QA , PBHV9115TLH , PBHV9540X , PBSS2515MB , PBSS4160X , PBSS4220PANS , BD136 , PBSS4360PAS , PBSS4360X , PBSS5220PAPS , PBSS5250TH , PBSS5255PAPS , PBSS5260PAPS , PBSS5350TH , PBSS5360PAS .
History: PMST2222 | SD460 | 3DD159F | 2N5551A-Y1 | JE9012D | D43CU4 | KTC811T
History: PMST2222 | SD460 | 3DD159F | 2N5551A-Y1 | JE9012D | D43CU4 | KTC811T



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