PBSS4260PANS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4260PANS

Código: 3L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.37 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 6.5 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT1118D

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PBSS4260PANS datasheet

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PBSS4260PANS

PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement PBSS5260PAPS 2. Features and benefits

 3.1. Size:249K  nxp
 pbss4260pan.pdf pdf_icon

PBSS4260PANS

PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4260PANP. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect

 3.2. Size:340K  nxp
 pbss4260panp.pdf pdf_icon

PBSS4260PANS

PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4260PAN. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect

 6.1. Size:244K  nxp
 pbss4260qa.pdf pdf_icon

PBSS4260PANS

PBSS4260QA 60 V, 2 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5260QA. 2. Features and benefits Very low collector-emitter

MOSTRAR MÁS

Otros transistores... NMB2227A, PBHV8115TLH, PBHV8515QA, PBHV9115TLH, PBHV9540X, PBSS2515MB, PBSS4160X, PBSS4220PANS, BD136, PBSS4360PAS, PBSS4360X, PBSS5220PAPS, PBSS5250TH, PBSS5255PAPS, PBSS5260PAPS, PBSS5350TH, PBSS5360PAS