All Transistors. PBSS4260PANS Datasheet

 

PBSS4260PANS Datasheet and Replacement


   Type Designator: PBSS4260PANS
   SMD Transistor Code: 3L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.37 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 6.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT1118D
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PBSS4260PANS Datasheet (PDF)

 ..1. Size:734K  nxp
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PBSS4260PANS

PBSS4260PANS60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor15 December 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.PNP/PNP complement: PBSS5260PAPS2. Features and benefits

 3.1. Size:249K  nxp
 pbss4260pan.pdf pdf_icon

PBSS4260PANS

PBSS4260PAN60 V, 2 A NPN/NPN low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect

 3.2. Size:340K  nxp
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PBSS4260PANS

PBSS4260PANP60 V, 2 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect

 6.1. Size:244K  nxp
 pbss4260qa.pdf pdf_icon

PBSS4260PANS

PBSS4260QA60 V, 2 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5260QA.2. Features and benefits Very low collector-emitter

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Keywords - PBSS4260PANS transistor datasheet

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