PDTA123JQA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTA123JQA
Material: Si
Polaridad de transistor: PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.28 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: SOT1215
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PDTA123JQA Datasheet (PDF)
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123JTPNP resistor-equipped transistor1999 May 27Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JTFEATURES Built-in bias resistors (typ 2.2 kand 47 k respectively)3handbook, 4 columns Simplification of circuit design3 Reduces number
Otros transistores... PBSS5350TH , PBSS5360PAS , PBSS5360X , PDTA114EQA , PDTA114TMB , PDTA114YQA , PDTA115EMB , PDTA115TMB , 2N5401 , PDTA123TMB , PDTA123YMB , PDTA124EMB , PDTA124EQA , PDTA143EQA , PDTA143XQA , PDTA143ZQA , PDTA144EQA .



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