PDTA123JQA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTA123JQA
Material: Si
Polaridad de transistor: PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.28 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: SOT1215
Búsqueda de reemplazo de PDTA123JQA
PDTA123JQA Datasheet (PDF)
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf

PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType
pdta123jef 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA123JEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red
pdta123je 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA123JEPNP resistor-equipped transistorProduct specification 1998 Nov 25Supersedes data of 1997 Dec 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JEFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)handbook, halfpage33 Simplification of circuit d
pdta123jt 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123JTPNP resistor-equipped transistor1999 May 27Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JTFEATURES Built-in bias resistors (typ 2.2 kand 47 k respectively)3handbook, 4 columns Simplification of circuit design3 Reduces number
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N2154A | PBSS5630PA | KSH13009W | RN1311 | RN1321A | RN1414 | 2SC3878
History: 2N2154A | PBSS5630PA | KSH13009W | RN1311 | RN1321A | RN1414 | 2SC3878



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irf540 datasheet | irf530 | 2n3565 | irf530n | pn2222a datasheet | tip41c transistor | 2n5087 | ksa1381