MMBT3904L3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT3904L3 📄📄
Código: 1AM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: DFN1006-3
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MMBT3904L3 datasheet
..1. Size:363K mcc
mmbt3904l3.pdf 
MMBT3904L3 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range
5.1. Size:164K motorola
mmbt3904lt1rev1d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 6 Collector Emitter Voltage VCEO 40 Vdc SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VE
5.2. Size:230K motorola
mmbt3904l.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 6 Collector Emitter Voltage VCEO 40 Vdc SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VE
5.3. Size:396K diodes
mmbt3904lp.pdf
MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case X1-DFN1006-3 BVCEO > 40V Case Material Molded Plastic, Green Molding Compound. IC = 200mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 0.60mm2 Package Footprint,
5.4. Size:137K onsemi
mmbt3904l smmbt3904l.pdf
MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emitte
5.5. Size:131K onsemi
mmbt3904lt1g.pdf
MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emi
5.6. Size:131K onsemi
mmbt3904lt3g.pdf
MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emi
5.7. Size:114K onsemi
mmbt3904lt1-d.pdf
MMBT3904LT1G General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 40 Vdc BASE Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc 2 EMITTER Collector Current - Continuous IC 200 mAdc Coll
5.8. Size:248K taiwansemi
mmbt3904l.pdf
MMBT3904L Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Cas
5.9. Size:1617K lge
mmbt3904lt1.pdf
MMBT3904LT1 NPN SWITCHING TRANSISTOR 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min Max A 2.70 3.10 K B (MMBT3906). B 1.10 1.50 C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 Typical J D E 0.35 0.48 Collector-emitter Voltage VCEO=40V. G G 1.80 2.00 H 0.02 0.1 H
5.10. Size:374K willas
mmbt3904lt1.pdf
FM120-M WILLAS MMBT3904LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. RoHS product for packing code suffix "G", SOD-123H Low profile surfa
5.11. Size:1002K shenzhen
mmbt3904lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.2 W (Tamb=25 ) 1. 3 Collector current ICM 0.2 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range Unit mm TJ, Ts
5.12. Size:1042K first silicon
mmbt3904ltg.pdf
MMBT3904LTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Maximum Ratings 1 Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc SOT 23 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc 3 COLLECTOR Thermal Charact
5.13. Size:1062K wpmtek
mmbt3904l mmbt3904h.pdf
Integrated in OVP&OCP products provider MMBT3904 SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Sm
5.14. Size:435K cn yfw
mmbt3904 mmbt3904l mmbt3904h mmbt3904j.pdf
MMBT3904 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Complementary to MMBT3906 Marking 1AM Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dis
5.15. Size:1725K cn yongyutai
mmbt3904l mmbt3904h.pdf
MMBT3904 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT3906 Collector Current Ic=200mA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector P
5.16. Size:925K cn zre
mmbt3904l mmbt3904h.pdf
MMBT3904 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack
5.17. Size:1449K cn yfsemi
mmbt3904l mmbt3904h.pdf
YFSEMI ELECTRON SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Voltage 6 V IC Coll
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