MMBT3904L3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT3904L3
Código: 1AM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: DFN1006-3
Búsqueda de reemplazo de transistor bipolar MMBT3904L3
MMBT3904L3 Datasheet (PDF)
mmbt3904l3.pdf
MMBT3904L3Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range:
mmbt3904lt1rev1d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1
mmbt3904l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1
mmbt3904lp.pdf
MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > 40V Case Material: Molded Plastic, Green Molding Compound. IC = 200mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint,
mmbt3904l smmbt3904l.pdf
MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emitte
mmbt3904lt1g.pdf
MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi
mmbt3904lt3g.pdf
MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi
mmbt3904lt1-d.pdf
MMBT3904LT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO 40 VdcBASECollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 Vdc 2EMITTERCollector Current - Continuous IC 200 mAdcColl
mmbt3904l.pdf
MMBT3904LTaiwan SemiconductorSmall Signal Product300mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin (Sn) lead finish with Nickel (Ni) underplate- Pb free version and RoHS compliant- Packing code with suffix "G" means green compound (halogen-free) SOT-23MECHANICAL DATA- Cas
mmbt3904lt1.pdf
MMBT3904LT1 NPN SWITCHING TRANSISTOR1. BASE 2. EMITTER3. COLLECTORFEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min MaxA 2.70 3.10K B(MMBT3906). B 1.10 1.50C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 TypicalJDE 0.35 0.48 Collector-emitter Voltage VCEO=40V. GG 1.80 2.00H 0.02 0.1H
mmbt3904lt1.pdf
FM120-M WILLASMMBT3904LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.RoHS product for packing code suffix "G", SOD-123H Low profile surfa
mmbt3904lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.2 W (Tamb=25) 1. 3 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range Unit: mm TJ, Ts
mmbt3904ltg.pdf
MMBT3904LTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish3Maximum Ratings1Rating Symbol Value Unit2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcSOT23Emitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdc3COLLECTORThermal Charact
mmbt3904l mmbt3904h.pdf
Integrated inOVP&OCP productsproviderMMBT3904SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Sm
mmbt3904 mmbt3904l mmbt3904h mmbt3904j.pdf
MMBT3904 SOT-23 NPN Transistors321.Base Features2.Emitter1 3.Collector Complementary to MMBT3906 Marking:1AM Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6 VCollector Current - Continuous IC 0.2 ACollector Power Dis
mmbt3904l mmbt3904h.pdf
MMBT3904 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT3906 Collector Current: Ic=200mAMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 200 mACollector P
mmbt3904l mmbt3904h.pdf
MMBT3904 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack
mmbt3904l mmbt3904h.pdf
YFSEMI ELECTRONSOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Voltage 6 V IC Coll
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