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MMBT5401-MS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT5401-MS
   Código: 2L
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-23

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MMBT5401-MS Datasheet (PDF)

 ..1. Size:4192K  msksemi
mmbt5401-ms.pdf

MMBT5401-MS
MMBT5401-MS

www.msksemi.comMMBT5401-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching1. BASEMARKING: 2L 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emit

 5.1. Size:950K  semtech
mmbt5401-haf.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) aParameter Symbol Value Unit Collector Base Voltage -V 160 V CBOCollector Emitter Voltage -V 150 V CEOEmitt

 5.2. Size:92K  comchip
mmbt5401-g.pdf

MMBT5401-MS
MMBT5401-MS

General Purpose TransistorMMBT5401-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction.0.119(3.00)0.110(2.80) -Complementary NPN type available (MMBT5551-G).3 -Ideal for medium power amplification and switching.0.056(1.40)0.047(1.20)1 2Diagram: 0.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.0

 5.3. Size:434K  powersilicon
mmbt5401-t3 mmbt5401g-t3.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

 5.4. Size:920K  cn salltech
mmbt5401-l mmbt5401-h.pdf

MMBT5401-MS
MMBT5401-MS

 5.5. Size:786K  cn shandong jingdao microelectronics
mmbt5401-l mmbt5401-h.pdf

MMBT5401-MS
MMBT5401-MS

Jingdao Microelectronics co.LTD MMBT5401MMBT5401SOT-23PNP TRANSISTOR3FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -160 V2.EMITTER3.COLLECTORCollec

 5.6. Size:498K  cn yfw
mmbt5401 mmbt5401-l mmbt5401-h.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 SOT-23 PNP Transistors321.BaseFeatures 2.Emitter1 3.Collector High Voltage TransistorsPb-Free Packages are Available Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -5 VCollector current-continuous IC -0.6 ACollector P

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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