MMBT5401-MS Todos los transistores

 

MMBT5401-MS Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT5401-MS
   Código: 2L
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-23
 

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Principales características: MMBT5401-MS

 ..1. Size:4192K  msksemi
mmbt5401-ms.pdf pdf_icon

MMBT5401-MS

www.msksemi.com MMBT5401-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emit

 5.1. Size:950K  semtech
mmbt5401-haf.pdf pdf_icon

MMBT5401-MS

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) a Parameter Symbol Value Unit Collector Base Voltage -V 160 V CBO Collector Emitter Voltage -V 150 V CEO Emitt

 5.2. Size:92K  comchip
mmbt5401-g.pdf pdf_icon

MMBT5401-MS

General Purpose Transistor MMBT5401-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction. 0.119(3.00) 0.110(2.80) -Complementary NPN type available (MMBT5551-G). 3 -Ideal for medium power amplification and switching. 0.056(1.40) 0.047(1.20) 1 2 Diagram 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.0

 5.3. Size:434K  powersilicon
mmbt5401-t3 mmbt5401g-t3.pdf pdf_icon

MMBT5401-MS

MMBT5401 GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability MIL-STD-202, Method 208 PB Free Products Are Available 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

Otros transistores... DTC143EKA-MS , FZT955-MS , MMBT2222A-MS , MMBT2907A-MS , MMBT3904-MS , MMBT3904T-MS , MMBT3906-MS , MMBT3906T-MS , BC549 , MMBT5551-MS , MMBTA42-MS , MMBTA44-MS , MMBTA92-MS , MMBTA94-MS , MS13001 , S8050-MS , S8550-MS .

History: TIPK117

 

 
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