Справочник транзисторов. MMBT5401-MS

 

Биполярный транзистор MMBT5401-MS - описание производителя. Основные параметры. Даташиты.

Наименование производителя: MMBT5401-MS

Маркировка: 2L

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 160 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.6 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 100 MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT-23

Аналоги (замена) для MMBT5401-MS

 

 

MMBT5401-MS Datasheet (PDF)

 ..1. Size:4192K  msksemi
mmbt5401-ms.pdf

MMBT5401-MS
MMBT5401-MS

www.msksemi.comMMBT5401-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching1. BASEMARKING: 2L 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emit

 5.1. Size:92K  comchip
mmbt5401-g.pdf

MMBT5401-MS
MMBT5401-MS

General Purpose TransistorMMBT5401-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction.0.119(3.00)0.110(2.80) -Complementary NPN type available (MMBT5551-G).3 -Ideal for medium power amplification and switching.0.056(1.40)0.047(1.20)1 2Diagram: 0.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.0

 5.2. Size:434K  powersilicon
mmbt5401-t3 mmbt5401g-t3.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

 6.1. Size:189K  motorola
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5401LT1/DHigh Voltage TransistorMMBT5401LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXI

 6.2. Size:75K  fairchild semi
2n5401 mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VI

 6.3. Size:67K  fairchild semi
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for Capplications requiring high voltage.EBSOT-23Mark: 2LPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Bas

 6.4. Size:287K  diodes
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type - MMBT5551 Case Material: Molded Plastic, Green Molding Compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 6.5. Size:162K  mcc
mmbt5401 2.pdf

MMBT5401-MS
MMBT5401-MS

MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OCTransistor Capable of 0.3Watts of Power Dissipation

 6.6. Size:433K  mcc
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC

 6.7. Size:125K  onsemi
nsvmmbt5401lt3g.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO

 6.8. Size:76K  onsemi
nsvmmbt5401wt1g.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

 6.9. Size:112K  onsemi
mmbt5401lt1g smmbt5401lt1g mmbt5401lt3g.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI

 6.10. Size:81K  onsemi
mmbt5401l smmbt5401l nsvmmbt5401l.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR

 6.11. Size:216K  onsemi
mmbt5401m3.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401M3High Voltage TransistorPNP SiliconThe MMBT5401M3 device is a spin-off of our popular SOT-23three-leaded device. It is designed for general purpose amplifierapplications and is housed in the SOT-723 surface mount package.www.onsemi.comThis device is ideal for low-power surface mount applications whereboard space is at a premium.FeaturesSOT-723 NSV Prefix for Au

 6.12. Size:125K  onsemi
mmbt5401lt1g.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT

 6.13. Size:73K  onsemi
mmbt5401w.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

 6.14. Size:115K  onsemi
mmbt5401lt1-d.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS

 6.15. Size:76K  onsemi
mmbt5401wt1g.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

 6.16. Size:110K  utc
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT5401G-x-AE3-R SOT-23 E B C Tape ReelNote: Pin Assignment: E: Emitter B: Base C: Collector MARKING www.unisonic.com.t

 6.17. Size:226K  secos
mmbt5401w.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Ideal for Medium Power Amplification and Switching 33 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 11 22K ECollector 3 DH JF GMARKING: K4M 1

 6.18. Size:111K  secos
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES ALIdeal for medium power amplification and switching 33Top View C B11 2MARKING 2K E2L DH JF GABSOLUTE MAXIMUM RATINGS Millimeter MillimeterREF. REF. Min. Max. Min. Max.Parameter Symb

 6.19. Size:743K  jiangsu
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -

 6.20. Size:640K  jiangsu
ad-mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec

 6.21. Size:165K  zovie
mmbt5401gh.pdf

MMBT5401-MS
MMBT5401-MS

Zowie Technology CorporationHigh Voltage TransistorLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.MMBT5401GH312SOT-23MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CBO 160 VdcEmitterBase Voltage V EBO 5.0

 6.22. Size:621K  htsemi
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401TRANSISTOR(PNP) SOT-231. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current

 6.23. Size:295K  gsme
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM5401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -150 Vdc-

 6.24. Size:194K  lge
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

 6.25. Size:497K  wietron
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401High Voltage PNP TransistorsCOLLECTOR3311BASE22SOT-23EMITTERWEITRONhttp://www.weitron.com.twMMBT5401ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Min Max UnitON CHARACTERISTICSDC Current Gain-50(IC=-1.0mAdc, VCE=-5.0Vdc)hFE-60 240(IC=-10mAdc, VCE=-5.0Vdc)50-(IC=-50mAdc, VCE=-5.0Vdc)

 6.26. Size:325K  willas
mmbt5401lt1.pdf

MMBT5401-MS
MMBT5401-MS

FM120-M WILLASMMBT5401LT1THRUHigh Voltage TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in order to o

 6.27. Size:910K  shenzhen
mmbt5401lt1.pdf

MMBT5401-MS
MMBT5401-MS

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm

 6.28. Size:304K  can-sheng
mmbt5401 sot-23.pdf

MMBT5401-MS
MMBT5401-MS

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

 6.29. Size:920K  blue-rocket-elect
mmbt5401t.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T)High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag

 6.30. Size:1108K  blue-rocket-elect
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , MMBT5551 High voltage, complementary Pair with MMBT5551. / Applications General purpose high voltage amplifier.

 6.31. Size:1140K  kexin
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

SMD Type TransistorsSMD TypePNP TransistorsMMBT5401 (KMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter volta

 6.32. Size:252K  galaxy
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

Product specification PNP General Purpose Transistor MMBT5401 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5401 2L SOT-23

 6.33. Size:265K  globaltech semi
gstmmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : -150V amplifier and switch. Collector-Base Voltage : -160V Collector Current-Continuous : -500mA Lead(Pb)-FreePackages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information

 6.34. Size:474K  slkor
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401FEATURESFEATURESFEATURESFEATURESPNP High Voltage TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Rating UnitCollector-Emitter VoltageV -150 VdcCEOCollector-Base Voltage V -160 VdcCBOEmitter-Base Voltage V -6.0 VdcEBOCollector CurrentContinuous Ic -500 mAdcTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICS

 6.35. Size:419K  agertech
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401FeaturesSOT-23(TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip1 Base 2. Emitter 3. CollectoroC,Absolute Maximum Ratings (T =25 unless otherwiseAnoted)Parameter Symbol Value Unit-V 160 VCollector Base Voltage CBOCollector Emitter Voltage -V 150 VCEO-V 6VEmitter Base Voltage EBOCollector Current -I 600 mACP 350 mWPow

 6.36. Size:2327K  born
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 FeaturesComplementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING: 2L2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB

 6.37. Size:3380K  fuxinsemi
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and SwitchingMARKING: 2L 32MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTORVEBO Emitter-Base Voltage -5 V IC Collect

 6.38. Size:344K  fms
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15

 6.39. Size:2294K  high diode
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 HD-ST0.42SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking: 2LSymbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current -600 mA C

 6.40. Size:1268K  jsmsemi
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available(MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UNITV collector-base voltage -160 V CBO V

 6.41. Size:540K  mdd
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401TRANSISTOR(PNP)FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic PackageMARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow

 6.42. Size:1054K  cn shikues
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

 6.43. Size:1770K  cn shikues
mmbt5401dw.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMB

 6.44. Size:1003K  cn doeshare
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT5401 2L . Maximum Ra

 6.45. Size:610K  cn cbi
mmbt5401t.pdf

MMBT5401-MS
MMBT5401-MS

SOT-523 Plastic-Encapsulate TransistorsTRANSISTOR ( PNP)MMBT5401TSOT523FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand SwitchingMARKING:K4M1. BASE2. EMITTERMAXIMUM RATINGS (T =25 unless otherwise noted)a3. COLLECTORSymbol Parameter Value UnitVCBO Collector-Base Voltage -160 VVCEO Collector-Emi

 6.46. Size:257K  cn cbi
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

 6.47. Size:799K  cn fosan
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT5401FEATURES PNP High Voltage TransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV -150 VdcCEO-Collector-Base VoltageV -160 VdcCBO-Emitte

 6.48. Size:2016K  cn goodwork
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -150Volts POWER 300mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V.Collector current IC=-0.6A.ansition frequency fT>100MHz @ IC=-Tr20mAdc, VCE=-6Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

 6.49. Size:722K  cn hottech
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

MMBT5401BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symb

 6.50. Size:554K  cn idchip
mmbt5401.pdf

MMBT5401-MS
MMBT5401-MS

PNP MMBT5401MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V

Другие транзисторы... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2SA1943 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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