S2000AFI Todos los transistores

 

S2000AFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: S2000AFI
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7(typ) MHz
   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: ISOWATT218

 Búsqueda de reemplazo de transistor bipolar S2000AFI

 

S2000AFI Datasheet (PDF)

 ..1. Size:59K  st
s2000afi.pdf

S2000AFI
S2000AFI

S2000AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV21DESCRIPTIONThe S2000AFI is manufactured usingISOWATT218Multiepitaxial Mesa technology for cost-effectivehigh performance and use

 ..2. Size:117K  inchange semiconductor
s2000afi.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITION

 7.1. Size:216K  st
s2000af.pdf

S2000AFI
S2000AFI

S2000AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tigh hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pac

 7.2. Size:117K  inchange semiconductor
s2000af.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS

 8.1. Size:37K  inchange semiconductor
s2000a.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol

 8.2. Size:64K  inchange semiconductor
s2000a1.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A1 DESCRIPTION With TO-3PH package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING(See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 sim

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


S2000AFI
  S2000AFI
  S2000AFI
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top