S2000AFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S2000AFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7(typ) MHz
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta: ISOWATT218
Búsqueda de reemplazo de S2000AFI
S2000AFI Datasheet (PDF)
s2000afi.pdf

S2000AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV21DESCRIPTIONThe S2000AFI is manufactured usingISOWATT218Multiepitaxial Mesa technology for cost-effectivehigh performance and use
s2000afi.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITION
s2000af.pdf

S2000AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tigh hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pac
s2000af.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n5401 datasheet | mj21194g | irfz34n | mn2488 | irfb438 | mj21193g | irf3710 pinout | irf9530 datasheet