S2000AFI Todos los transistores

 

S2000AFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S2000AFI

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 7(typ) MHz

Ganancia de corriente contínua (hfe): 6

Paquete / Cubierta: ISOWATT218

Búsqueda de reemplazo de transistor bipolar S2000AFI

 

S2000AFI Datasheet (PDF)

 ..1. Size:59K  st
 s2000afi.pdf

S2000AFI S2000AFI

S2000AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV21DESCRIPTIONThe S2000AFI is manufactured usingISOWATT218Multiepitaxial Mesa technology for cost-effectivehigh performance and use

 ..2. Size:117K  inchange semiconductor
 s2000afi.pdf

S2000AFI S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITION

 7.1. Size:216K  st
 s2000af.pdf

S2000AFI S2000AFI

S2000AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tigh hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pac

 7.2. Size:117K  inchange semiconductor
 s2000af.pdf

S2000AFI S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS

 8.1. Size:64K  inchange semiconductor
 s2000a1.pdf

S2000AFI S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A1 DESCRIPTION With TO-3PH package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING(See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 sim

 8.2. Size:37K  inchange semiconductor
 s2000a.pdf

S2000AFI S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol

Otros transistores... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2SA1943 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
Back to Top