All Transistors. S2000AFI Datasheet

 

S2000AFI Datasheet, Equivalent, Cross Reference Search


   Type Designator: S2000AFI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7(typ) MHz
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: ISOWATT218

 S2000AFI Transistor Equivalent Substitute - Cross-Reference Search

   

S2000AFI Datasheet (PDF)

 ..1. Size:59K  st
s2000afi.pdf

S2000AFI
S2000AFI

S2000AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV21DESCRIPTIONThe S2000AFI is manufactured usingISOWATT218Multiepitaxial Mesa technology for cost-effectivehigh performance and use

 ..2. Size:117K  inchange semiconductor
s2000afi.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITION

 7.1. Size:216K  st
s2000af.pdf

S2000AFI
S2000AFI

S2000AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tigh hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pac

 7.2. Size:117K  inchange semiconductor
s2000af.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION With TO-3P(H)IS package High voltage Fast switching APPLICATIONS Horizontal deflection for color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS

 8.1. Size:37K  inchange semiconductor
s2000a.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol

 8.2. Size:64K  inchange semiconductor
s2000a1.pdf

S2000AFI
S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A1 DESCRIPTION With TO-3PH package High voltage ,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING(See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 sim

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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