2SC1623L6-T3 Todos los transistores

 

2SC1623L6-T3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC1623L6-T3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250(typ) MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23

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2SC1623L6-T3 Datasheet (PDF)

 ..1. Size:207K  powersilicon
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2SC1623L6-T3
2SC1623L6-T3

2SC1623PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current GainhFE=200(Typ.) VCE=6V, IC=1mA High VoltageVCEO = 50V MECHANICAL DATA Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623--T3 SOT-23 Tape Reel See Classifica

 5.1. Size:563K  slkor
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2SC1623L6-T3

2SC1623TRANSISTOR (NPN) TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -C

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2SC1623L6-T3
2SC1623L6-T3

RUMW UMW 2SC1623SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitte

 5.3. Size:909K  cn salltech
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2SC1623L6-T3
2SC1623L6-T3

 5.4. Size:784K  cn shandong jingdao microelectronics
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2SC1623L6-T3
2SC1623L6-T3

Jingdao Microelectronics co.LTD 2SC16232SC1623 SOT-23NPN TRANSISTOR3FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASESymbolParameter Value Unit 2.EMITTER3.COLLECTORCollectorBase Voltage VCBO 60 VCollectorEmit

 5.5. Size:1126K  cn shikues
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2SC1623L6-T3
2SC1623L6-T3

 5.6. Size:914K  cn yongyutai
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2SC1623L6-T3
2SC1623L6-T3

2SC1623SOT323 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 100 m

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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