2SC1623L6-T3 Specs and Replacement

Type Designator: 2SC1623L6-T3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 typ MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

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2SC1623L6-T3 datasheet

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2SC1623L6-T3

2SC1623 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current Gain hFE=200(Typ.) VCE=6V, IC=1mA High Voltage VCEO = 50V MECHANICAL DATA Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623 - -T3 SOT-23 Tape Reel See Classifica... See More ⇒

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2SC1623L6-T3

2SC1623 TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -C... See More ⇒

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2SC1623L6-T3

R UMW UMW 2SC1623 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitte... See More ⇒

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2SC1623L6-T3

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Detailed specifications: S9018-MS, SS8050-MS, SS8550-MS, S2000AFI, UB1580, UP3855, 2SC1623L4-T3, 2SC1623L5-T3, D667, 2SC1623L7-T3, D882-R-TE3B, D882-R-TD3T, D882-R-TC2R, D882-R-T89R, D882-O-TE3B, D882-O-TD3T, D882-O-TC2R

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