2SAR572D3 Todos los transistores

 ..1. Size:1659K  rohm
 2sar572d3.pdf

2SAR572D3 PNP -5.0A -30V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO -30V IC -5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary NPN Types 2SCR572D3. 3) Low VCE(sat) VCE(sat)=-400mV(Max.). (IC/IB=-2A/-100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging spec

 6.1. Size:800K  rohm
 2sar572d.pdf

2SAR572D Datasheet PNP -5.0A -30V Middle Power Transistor lOutline l Parameter Value CPT VCEO -30V IC -5A 2SAR572D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR572D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-2A/-100mA) 4) Lead

 6.2. Size:177K  inchange semiconductor
 2sar572d.pdf

isc Silicon PNP Power Transistor 2SAR572D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-2A,I =-0.1A) CE(sat) C B Complementary NPN types 2SCR572D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 8.1. Size:1463K  rohm
 2sar573dfhg.pdf

2SAR573D FHG Datasheet PNP -3.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline l TO-252 Parameter Value SC-63 VCEO -50V IC -3A CPT lFeatures lInner circuit l l 1) Suitable for Middle Power Driver. 2) Complementary NPN Types 2SCR573D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) lApplication l

 8.2. Size:801K  rohm
 2sar574d.pdf

2SAR574D Datasheet PNP -2.0A -80V Middle Power Transistor lOutline l Parameter Value CPT VCEO -80V IC -2A 2SAR574D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR574D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) 4) Lead

 8.3. Size:801K  rohm
 2sar573d.pdf

2SAR573D Datasheet PNP -3.0A -50V Middle Power Transistor lOutline l Parameter Value CPT VCEO -50V IC -3A 2SAR573D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR573D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) 4) Lead

 8.4. Size:190K  inchange semiconductor
 2sar574d.pdf

isc Silicon PNP Power Transistor 2SAR574D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-1A,I =-50mA) CE(sat) C B Complementary NPN types 2SCR574D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 8.5. Size:178K  inchange semiconductor
 2sar573d.pdf

isc Silicon PNP Power Transistor 2SAR573D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-1A,I =-50mA) CE(sat) C B Complementary NPN types 2SCR573D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE