All Transistors. 2SAR572D3 Datasheet

 

2SAR572D3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SAR572D3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300(typ) MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO252

 2SAR572D3 Transistor Equivalent Substitute - Cross-Reference Search

   

2SAR572D3 Datasheet (PDF)

 ..1. Size:1659K  rohm
2sar572d3.pdf

2SAR572D3
2SAR572D3

2SAR572D3PNP -5.0A -30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO-30VIC-5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary NPN Types : 2SCR572D3.3) Low VCE(sat)VCE(sat)=-400mV(Max.).(IC/IB=-2A/-100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging spec

 6.1. Size:800K  rohm
2sar572d.pdf

2SAR572D3
2SAR572D3

2SAR572DDatasheetPNP -5.0A -30V Middle Power TransistorlOutlinelParameter Value CPTVCEO-30VIC-5A 2SAR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR572D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-2A/-100mA)4) Lead

 6.2. Size:177K  inchange semiconductor
2sar572d.pdf

2SAR572D3
2SAR572D3

isc Silicon PNP Power Transistor 2SAR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-2A,I =-0.1A)CE(sat) C BComplementary NPN types:2SCR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.1. Size:1463K  rohm
2sar573dfhg.pdf

2SAR572D3
2SAR572D3

2SAR573D FHGDatasheetPNP -3.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutlinel TO-252 Parameter Value SC-63 VCEO-50VIC-3ACPTlFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)lApplicationl

 8.2. Size:801K  rohm
2sar574d.pdf

2SAR572D3
2SAR572D3

2SAR574DDatasheetPNP -2.0A -80V Middle Power TransistorlOutlinelParameter Value CPTVCEO-80VIC-2A 2SAR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR574D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead

 8.3. Size:801K  rohm
2sar573d.pdf

2SAR572D3
2SAR572D3

2SAR573DDatasheetPNP -3.0A -50V Middle Power TransistorlOutlinelParameter Value CPTVCEO-50VIC-3A 2SAR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead

 8.4. Size:190K  inchange semiconductor
2sar574d.pdf

2SAR572D3
2SAR572D3

isc Silicon PNP Power Transistor 2SAR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.5. Size:178K  inchange semiconductor
2sar573d.pdf

2SAR572D3
2SAR572D3

isc Silicon PNP Power Transistor 2SAR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top