2SCR533P5 Todos los transistores

 

2SCR533P5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SCR533P5

Código: NM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 320(typ) MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hfe): 180

Paquete / Cubierta: SOT89

Búsqueda de reemplazo de transistor bipolar 2SCR533P5

 

2SCR533P5 Datasheet (PDF)

 ..1. Size:1805K  rohm
 2scr533p5.pdf

2SCR533P5 2SCR533P5

2SCR533P5DatasheetMiddle Power Transistors (50V / 3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specificati

 6.1. Size:1910K  rohm
 2scr533p.pdf

2SCR533P5 2SCR533P5

2SCR533PDatasheetMiddle Power Transistors (50V / 3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

 6.2. Size:1548K  rohm
 2scr533pfra.pdf

2SCR533P5 2SCR533P5

2SCR533P FRADatasheetMiddle Power Transistor (50V / 3A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

 7.1. Size:486K  rohm
 2scr533d.pdf

2SCR533P5 2SCR533P5

Midium Power Transistors (50V / 3A) 2SCR533D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv

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