BC847BU3 Todos los transistores

 

BC847BU3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC847BU3
   Código: G1F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200(typ) MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar BC847BU3

 

BC847BU3 Datasheet (PDF)

 ..1. Size:1659K  rohm
bc847b bc847bu3.pdf

BC847BU3
BC847BU3

BC847B / BC847BU3DatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SOT-23 SOT-323VCEO45VIC100mA BC847B BC847BU3(SST3) (UMT3) lFeatures lInner circuitl l1)BVCEO>45V(IC=1mA)2)Complements the BC857B/BC857BU3.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

 7.1. Size:200K  cn sino-ic
sebc847bu sebc847cu.pdf

BC847BU3
BC847BU3

SHANGHAI June 2009 MICROELECTRONICS CO., LTD. SEBC847BU/SEBC847CU NPN General Purpose Transistor Revision:A External dimensions (Units : mm) Features BVCEO

 8.1. Size:123K  philips
bc847bv.pdf

BC847BU3
BC847BU3

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC847BVNPN general purpose double transistorProduct data sheet 2001 Sep 10NXP Semiconductors Product data sheetNPN general purpose double transistor BC847BVFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm 1.2 mm 0.55 mm ultra thin 1, 4 emitter TR1; TR2package2, 5 base TR1; TR2

 8.2. Size:53K  philips
bc847bpn 2.pdf

BC847BU3
BC847BU3

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC847BPNNPN/PNP general purposetransistor1999 Apr 26Preliminary specificationSupersedes data of 1997 Jul 09Philips Semiconductors Preliminary specificationNPN/PNP general purpose transistor BC847BPNFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 e

 8.3. Size:51K  philips
bc847bs 2.pdf

BC847BU3
BC847BU3

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC847BSNPN general purpose doubletransistor1999 Apr 28Product specificationSupersedes the data of 1997 Jul 14Philips Semiconductors Product specificationNPN general purpose double transistor BC847BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 e

 8.4. Size:136K  philips
bc847bvn.pdf

BC847BU3
BC847BU3

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC847BVNNPN/PNP general purpose transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 30NXP Semiconductors Product data sheetNPN/PNP general purpose transistor BC847BVNFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm x 1.2 mm ultra thin package1, 4 emitter TR1; TR2 Exce

 8.5. Size:101K  philips
bc847bpn.pdf

BC847BU3
BC847BU3

BC847BPN45 V, 100 mA NPN/PNP general-purpose transistorRev. 04 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

 8.6. Size:57K  st
bc847b bc847c.pdf

BC847BU3
BC847BU3

BC847BBC847CSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC847B 1FBC847C 1G SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARYTYPE IS BC857BSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTORSWITH HIGH GAIN

 8.7. Size:42K  st
bc847bw bc847cw.pdf

BC847BU3
BC847BU3

BC847BWBC847CWSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC847BW 1FWBC847CW 1GW SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-323 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847BW - THE PNP COMPLEMENTARYTYPE IS BC857BWSOT-323APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTORSWITH

 8.8. Size:193K  fairchild semi
bc847bs.pdf

BC847BU3
BC847BU3

June 2007BC847BSNPN Multi-chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collector currents to 200 mA.Sourced from Process 07. E2B2 C1 Dual NPN Signal TransisterNOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier can SC70-6 C2be of either orientation and will not affect the

 8.9. Size:225K  nxp
bc847aqb bc847bqb bc847cqb.pdf

BC847BU3
BC847BU3

BC847xQB series45 V, 100 mA NPN general-purpose transistorRev. 1 24 January 2020 Product data sheet1. General descriptionNPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.Table 1. Product overviewType number Package PNP complement:Nexperia JEDECBC847AQB SOT8015 MO-340BA BC85

 8.10. Size:1275K  nxp
bc847aqa bc847bqa bc847cqa.pdf

BC847BU3
BC847BU3

BC847XQA series45 V, 100 mA NPN general-purpose transistorsRev. 1 26 August 2015 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP complementNexperia JEITA

 8.11. Size:144K  nxp
bc847bm bc847am.pdf

BC847BU3
BC847BU3

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847

 8.12. Size:564K  nxp
bc847bs.pdf

BC847BU3
BC847BU3

BC847BS45 V, 100 mA NPN/NPN general-purpose transistorRev. 03 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: BC857BS.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely ma

 8.13. Size:364K  nxp
bc847bmb bc847xmb.pdf

BC847BU3
BC847BU3

BC847xMB series45 V, 100 mA NPN general-purpose transistorsRev. 1 5 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC847AMB SOT883B - - BC857AMBBC847BMB SOT883B -

 8.14. Size:316K  nxp
bc847bv.pdf

BC847BU3
BC847BU3

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.15. Size:943K  nxp
bc847amb bc847bmb bc847cmb.pdf

BC847BU3
BC847BU3

BC847xMB series45 V, 100 mA NPN general-purpose transistorsRev. 1 5 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEITA JEDECBC847AMB SOT883B - - BC857AMBBC847BMB SOT88

 8.16. Size:201K  nxp
bc847bvn.pdf

BC847BU3
BC847BU3

BC847BVNNPN/PNP general purpose transistor20 May 2019 Product data sheet1. General descriptionNPN/PNP transistor pair in a SOT666 plastic package.2. Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced

 8.17. Size:212K  nxp
bc847w-q bc847aw-q bc847bw-q bc847cw-q.pdf

BC847BU3
BC847BU3

BC847xW-Q series45 V, 100 mA NPN general-purpose transistorsRev. 2 24 June 2021 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITABC847W-Q SOT323 SC-70 BC857W-QBC847AW-Q BC857AW-QBC847BW-Q BC857BW-Q

 8.18. Size:125K  nxp
bc847 bc847a bc847b bc847c bc847w bc847aw bc847bw bc847cw.pdf

BC847BU3
BC847BU3

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847

 8.19. Size:264K  nxp
bc847 bc847a bc847b bc847c bc847w bc847aw bc847bw bc847cw bc847am bc847bm bc847cm.pdf

BC847BU3
BC847BU3

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 12 24 October 2019 Product data sheet1. Product profile1.1. General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) orultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia

 8.20. Size:101K  nxp
bc847bpn.pdf

BC847BU3
BC847BU3

BC847BPN45 V, 100 mA NPN/PNP general-purpose transistorRev. 04 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

 8.21. Size:1362K  rohm
bc847bhzg.pdf

BC847BU3
BC847BU3

BC847B HZGDatasheetNPN General purpose transistorAEC-Q101 QualifiedlOutlinel SOT-23 Parameter Value VCEO45VIC100mASST3lFeatures lInner circuitl l1)BVCEO>45V(IC=1mA)2)Complements the BC857B HZG.lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackage Taping Reel size Tape width

 8.22. Size:26K  rohm
bc847b(rohm).pdf

BC847BU3

Transistors BC847B(SPEC-C22)619

 8.23. Size:97K  rohm
bc847b.pdf

BC847BU3
BC847BU3

BC847B Transistors NPN General Purpose Transistor BC847B Features External dimensions (Unit : mm) 1) BVCEO

 8.24. Size:417K  central
bc846awr bc847bwr.pdf

BC847BU3
BC847BU3

BC846W SERIESBC847W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

 8.25. Size:310K  diodes
bc847at bc847bt bc847ct.pdf

BC847BU3
BC847BU3

BC847AT, BT, CT 45V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 45V Case: SOT523 IC = 100mA Collector Current Case Material: Molded Plastic. Green Molding Compound. Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementar

 8.26. Size:191K  diodes
bc847bld.pdf

BC847BU3
BC847BU3

BC847BLD SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Please click here to visit our online spice models database.Features Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for

 8.27. Size:227K  diodes
bc847bvc.pdf

BC847BU3
BC847BU3

BC847BVC NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data BVCEO > 45V Case: SOT563 Ultra-Small Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Flammability Classification Rating 94V-0 Halogen and Antimony Free. Green Device (Note 3) Moistu

 8.28. Size:246K  diodes
bc847bs.pdf

BC847BU3
BC847BU3

BC847BSDUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Ideally Suited for Automated Insertion Case Material: Molded Plastic, Green Molding Compound. UL For switching and AF Amplifier Application Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Notes 1

 8.29. Size:284K  diodes
bc847blp.pdf

BC847BU3
BC847BU3

BC847BLP 45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > 45V Case Material: Molded Plastic, "Green" Molding Compound. IC = 100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13 ti

 8.30. Size:365K  diodes
bc847bv.pdf

BC847BU3
BC847BU3

BC847BV NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-563 C1 B2 E2 Complementary PNP Type Available (BC857BV) Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25BC Lead Free By Design/RoHS Compliant (Note 3) K4V YM "Green" Device (Note 5 and 6) B 1.10 1.25 1.20E1 B1 C2C 1.55 1.70 1.60DMe

 8.31. Size:143K  diodes
bc847blp4.pdf

BC847BU3
BC847BU3

BC847BLP4 45V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: DFN1006H4-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ultra Low Profile (0.4mm max) Moisture Sensitivity: Level 1 per J-STD-020 Complement

 8.32. Size:160K  diodes
bc847bvn.pdf

BC847BU3
BC847BU3

BC847BVN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: SOT563 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully Ro

 8.33. Size:210K  diodes
bc847bfz.pdf

BC847BU3
BC847BU3

BC847BFZ 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 45V Case: X2-DFN0606-3 IC = 100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound, PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level 1

 8.34. Size:299K  diodes
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types: BC856 BC858 Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

 8.35. Size:157K  diodes
bc847bfa.pdf

BC847BU3
BC847BU3

BC847BFA45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 45V Case: X2-DFN0806-3 IC = 100mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level

 8.36. Size:46K  diodes
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC847BU3
BC847BU3

BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating

 8.37. Size:876K  infineon
bc847a bc847b bc847bl3 bc847bw bc847c bc847cw bc848a bc848b bc848bl3 bc848bw bc848c bc848cw bc849b bc849c bc849cw bc850b bc850bw bc850c bc850cw.pdf

BC847BU3
BC847BU3

BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin

 8.38. Size:180K  infineon
bc848bf bc847bf.pdf

BC847BU3
BC847BU3

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 8.40. Size:280K  mcc
bc847bs sot-363.pdf

BC847BU3
BC847BU3

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthBC847BSMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Dual NPN Small Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package Signal Transistor

 8.41. Size:284K  mcc
bc847bs.pdf

BC847BU3
BC847BU3

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthBC847BSMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Dual NPN Small Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package Signal Transistor

 8.42. Size:266K  mcc
bc847bv sot-563.pdf

BC847BU3
BC847BU3

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth BC847BVMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epitaxial Die Construction NPN Complementary PNP Type Available (BC857BV) Plastic-Encapsulate Ultra-small Surface Mount Package Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoH

 8.43. Size:1045K  mcc
bc847bv.pdf

BC847BU3
BC847BU3

BC847BVFeatures Epitaxial Die Construction Complementary PNP Type Available BC857BV Ultra-Small Surface Mount Package NPN Halogen Free. Green Device (Note 1)Plastic Encapsulate Moisture Sensitivity Level 1Amplifier Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Inform

 8.44. Size:622K  mcc
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c bc849b bc849c.pdf

BC847BU3
BC847BU3

M C CTMMicro Commercial Components BC846A thru BC849CStatic Characteristic h I FE C 10 3000COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA18uA6 16uAT =25 14uA a 12uA4 100 10uA 8uA 6uA 24uA I B=2uA 0 100 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOREMITTER VOLTAGE V CE (V) V I

 8.45. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC847BU3
BC847BU3

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 8.46. Size:218K  onsemi
bc846bdw1t1g bc847bdw1t1g bc847cdw1t1g bc848cdw1t1g.pdf

BC847BU3
BC847BU3

DATA SHEETwww.onsemi.comDual General PurposeTransistorsSOT-363/SC-88CASE 419BNPN DualsSTYLE 1BC846BDW1, BC847BDW1,(3) (2) (1)BC848CDW1These transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(4) (5) (6)Features S and NSV Prefixes for Automotiv

 8.47. Size:144K  onsemi
bc847bdw1t1g bc848cdw1t1g.pdf

BC847BU3
BC847BU3

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 8.48. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC847BU3
BC847BU3

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.49. Size:158K  onsemi
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC847BU3
BC847BU3

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.50. Size:110K  onsemi
bc847bpdxv6 sbc847bpdxv6.pdf

BC847BU3
BC847BU3

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 8.51. Size:66K  onsemi
bc847att1 bc847btt1 bc847ctt1.pdf

BC847BU3
BC847BU3

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

 8.52. Size:177K  onsemi
bc847bpdw1t2g bc846bpdw1t1g.pdf

BC847BU3
BC847BU3

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 8.53. Size:131K  onsemi
bc846bpdw1t1g bc847bpdw1t1g bc848cpdw1t1g.pdf

BC847BU3
BC847BU3

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

 8.54. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC847BU3
BC847BU3

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.55. Size:123K  onsemi
sbc847blt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconSBC847BLT1G Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V3 We declare that the material of product compliance with RoHS requirements.1MAXIMUM RATINGS2Rating Symbol Value UnitSOT23CollectorEmitter Voltage VCEO 45 Vdc3COLLECT

 8.56. Size:177K  onsemi
bc847bpdw1t3g.pdf

BC847BU3
BC847BU3

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 8.57. Size:178K  onsemi
bc846bwt1g bc847awt1g bc847bwt1g bc847cwt1g bc848bwt1g bc848cwt1g.pdf

BC847BU3
BC847BU3

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 8.58. Size:216K  onsemi
bc846amtf bc846bmtf bc846cmtf bc847amtf bc847bmtf bc847cmtf bc848bmtf bc848cmtf bc850amtf bc850cmtf.pdf

BC847BU3
BC847BU3

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

 8.59. Size:64K  onsemi
nsvbc847btt1g.pdf

BC847BU3
BC847BU3

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

 8.60. Size:131K  onsemi
bc847blt1g bc847clt3g.pdf

BC847BU3
BC847BU3

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 8.61. Size:114K  onsemi
sbc847bpdxv6t1g.pdf

BC847BU3
BC847BU3

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 8.62. Size:655K  onsemi
bc847btt1g bc847att1 bc847ctt1g.pdf

BC847BU3
BC847BU3

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1BASE Pb-Free Packages are Available*2EMITTERMAXIMUM RATINGS (TA = 25C)Rating

 8.63. Size:144K  onsemi
nsvbc847bdw1t2g.pdf

BC847BU3
BC847BU3

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 8.64. Size:60K  onsemi
bc847bm3t5g.pdf

BC847BU3
BC847BU3

BC847BM3T5GPreferred Device General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-723 package which isdesigned for low power surface mount applications.http://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Max Unit1Collector-Emitter Voltage V

 8.65. Size:144K  onsemi
sbc847bdw1t1g.pdf

BC847BU3
BC847BU3

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 8.66. Size:109K  onsemi
sbc847bwt1g.pdf

BC847BU3
BC847BU3

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 8.67. Size:177K  onsemi
bc847bpdw1t1g bc848cpdw1t1g.pdf

BC847BU3
BC847BU3

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 8.68. Size:68K  onsemi
bc846bwt1g bc847bwt1g.pdf

BC847BU3
BC847BU3

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

 8.69. Size:144K  onsemi
sbc847bdw1t3g.pdf

BC847BU3
BC847BU3

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 8.70. Size:208K  onsemi
bc848cpdw1t1g bc846bpdw1t1g bc847bpdw1t1g.pdf

BC847BU3
BC847BU3

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

 8.71. Size:60K  onsemi
bc847bm3-d.pdf

BC847BU3
BC847BU3

BC847BM3T5GPreferred Device General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-723 package which isdesigned for low power surface mount applications.http://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Max Unit1Collector-Emitter Voltage V

 8.72. Size:144K  onsemi
bc847bdw1t3g bc846bdw1t1g.pdf

BC847BU3
BC847BU3

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 8.73. Size:131K  onsemi
bc847blt3g bc847clt1g.pdf

BC847BU3
BC847BU3

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 8.74. Size:229K  onsemi
bc846bdw1 bc847bdw1 bc848cdw1.pdf

BC847BU3
BC847BU3

Dual General PurposeTransistorsNPN DualsBC846BDW1, BC847BDW1,BC848CDW1www.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.FeaturesSOT-363/SC-88 S and NSV Prefixes for Automotive and Other ApplicationsCASE 419BSTYLE 1Requiring Unique Si

 8.75. Size:127K  onsemi
bc846bdw1t1g bc847bdw1t1g bc848cdw1t1g.pdf

BC847BU3
BC847BU3

BC846BDW1T1G,BC847BDW1T1G,BC848CDW1T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(4) (5) (6)Com

 8.76. Size:262K  onsemi
bc846bpdw1 bc847bpdw1 bc848cpdw1.pdf

BC847BU3
BC847BU3

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 8.77. Size:114K  onsemi
bc847bpdxv6t1g.pdf

BC847BU3
BC847BU3

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 8.78. Size:177K  onsemi
sbc847bpdw1t3g.pdf

BC847BU3
BC847BU3

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 8.79. Size:76K  onsemi
bc847bpdxv6t1-d.pdf

BC847BU3
BC847BU3

BC847BPDXV6T1,BC847BPDXV6T5Dual General PurposeTransistorNPN/PNP Dual (Complementary)http://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications. Lead-Free Solder PlatingMAXIMUM RATINGS - NPNQ1 Q2Rating Symbol Value UnitCollector-Emitter Vol

 8.80. Size:116K  onsemi
nsvbc847blt3g.pdf

BC847BU3
BC847BU3

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 8.81. Size:177K  onsemi
sbc847bpdw1t1g.pdf

BC847BU3
BC847BU3

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 8.82. Size:10K  semelab
bc847bcsm.pdf

BC847BU3

BC847BCSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 45V A =(0.04 0.004

 8.83. Size:639K  secos
bc847bv.pdf

BC847BU3
BC847BU3

BC847BVDual NPN TransistorsElektronische BauelementePlastic-Encapsulate TransistorsSOT-563RoHS Compliant ProductFEATURES.002(0.05).012(0.30) .051(1.30).000(0.00).004(0.10) .043(1.10) * Epitaxial Die Construction* Complementary PNP Type Available (BC857BV) .022(0.55).018(0.45).067(1.70) Ultra-Small Surface Mount Package* .059(1.50).011(0.27).007(0.17).067

 8.84. Size:201K  taiwansemi
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847BU3
BC847BU3

BC846A/B, BC847A/B/C, BC848A/B/CTaiwan SemiconductorSmall Signal Product200mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface mount device type- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) under plate- Pb free and RoHS compliant- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC- Halo

 8.85. Size:1592K  jiangsu
bc847bvn.pdf

BC847BU3
BC847BU3

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) BC847BVN SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W) Transistors in one packageMAKING: KAWMAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Em

 8.86. Size:593K  htsemi
bc847bv.pdf

BC847BU3
BC847BU3

BC847BVDUAL TRANSISTOR (NPN)SOT-563 FEATURES Epitaxial Die Construction Complementary PNP Type Available (BC857BV) Ultra-Small Surface Mount Package Marking: K4V MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current -C

 8.87. Size:2205K  htsemi
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Vo

 8.88. Size:267K  lge
bc847bv.pdf

BC847BU3
BC847BU3

BC847BV SOT-563 Dual Transistor (NPN)SOT-5631.6001.200Features 1.600 Epitaxial Die Construction 0.220 Complementary PNP Type Available (BC857BV) 0.500 Ultra-Small Surface Mount Package 0.565Marking: K4V Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCE

 8.89. Size:242K  semtech
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC847BU3
BC847BU3

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

 8.90. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 8.91. Size:391K  lrc
lbc847bwt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb FreeS-LBC846AWT1G,BWT1GDevice Package ShippingS-LBC847AWT1G,BWT1GLBC846AWT1G SC-703000/Tape&ReelS-LBC846AWT1GCWT1GLBC846AWT3G SC-70

 8.92. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 8.93. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 8.94. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 8.95. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 8.96. Size:404K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 8.97. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 8.98. Size:850K  lrc
lbc847bn3t5g.pdf

BC847BU3
BC847BU3

LBC847BN3T5GS-LBC847BN3T5GGeneral Purpose Transistors NPN Silicon1. FEATURESSOT883Moisture Sensitivity Level: 1ESD Rating Human Body Model: >4000 V Machine Model: >400 V3 COLLECTORWe declare that the material of product compliance with RoHS requirements and Halogen Free.1 BASES- prefix for automotive and other applications requiringunique sit

 8.99. Size:402K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 8.100. Size:138K  lrc
lbc847btt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 8.101. Size:172K  lrc
lbc847bpdw1t1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 8.102. Size:280K  lrc
lbc847bdw1t1g lbc847bdw1t3g.pdf

BC847BU3
BC847BU3

LBC847BDW1T1GS-LBC847BDW1T1GNPN Dual General Purpose Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringSC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice

 8.103. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 8.104. Size:230K  lrc
lbc847bdw1t1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GLBC847BDW1T1GNPN DualsLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produ

 8.105. Size:415K  lrc
lbc847blt1g.pdf

BC847BU3
BC847BU3

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 8.106. Size:95K  kexin
bc847bvn.pdf

BC847BU3

SMD Type TransistorsTransistorsNPN Darlington TransistorBC847BVN(KC847BVN) FeaturesUnit:mmSOT-5631.20 0.100.05 (max) Epitaxial Die Construction0.20 0.10 Complementary PNP Type Available4 3(BC857BVN)5 2 Ultra-Small Surface Mount Package6 11.60 0.10 0.525 ~ 0.607 REF.7 REF. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll

 8.107. Size:1957K  kexin
bc847bpn.pdf

BC847BU3
BC847BU3

SMD Type TransistorsComposite TransistorsBC847BPN (KC847BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistorsC1 B2 E20.5 mm (min)PNPNPNE1 B1 C21.9 mm Absolute Maximum Ratings Ta = 25Parame

 8.108. Size:446K  panjit
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf

BC847BU3
BC847BU3

BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per

 8.109. Size:536K  panjit
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf

BC847BU3
BC847BU3

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

 8.110. Size:153K  panjit
bc847bs-au.pdf

BC847BU3
BC847BU3

BC847BS-AUNPN GENERAL PURPOSE DUAL TRANSISTORVOLTAGE 45 Volt POWER 150 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Acquire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DAT

 8.111. Size:1070K  panjit
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf

BC847BU3
BC847BU3

BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic

 8.112. Size:330K  panjit
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf

BC847BU3
BC847BU3

BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha

 8.113. Size:522K  panjit
bc847bpn.pdf

BC847BU3
BC847BU3

BC847BPNDUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY)This device contains two electrically-isolated complimentary pair (NPN andPNP) general-purpose transistors. This device is ideal for portable SOT- 363applications where board space is at a premium.4455FEATURES6633Electrically-Isolated Complimentary Transistor Pairs22Lead free in compliance with EU Ro

 8.114. Size:123K  comchip
bc848bw-g bc847bw-g.pdf

BC847BU3
BC847BU3

Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055

 8.115. Size:145K  comchip
bc846c-g bc847b-g.pdf

BC847BU3
BC847BU3

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

 8.116. Size:500K  dxc
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf

BC847BU3
BC847BU3

Dual General Purpose TransistorsDual General Purpose TransistorsNPN/PNP Duals (Complimentary)DBC846BPDW1T1GDBC847BPDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isDBC847CPDW1T1Gdesigned for low power surface mount applications.DBC848BPDW1T1GWe declare that the material of product compliance wit

 8.117. Size:433K  umw-ic
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

RUMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collect

 8.119. Size:2633K  high diode
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

BC846-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; CB ESymbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846BC847 50 30

 8.120. Size:1245K  mdd
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

BC847SOT-23 Plastic-Encapsulate TransistorSOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, CBC848A, B, C 1. BASE2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsPACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)S

 8.121. Size:380K  powersilicon
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

DATA SHEET BC846A/B,BC847A/B/C,BC848A/B/C NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30 ~ 65 V CURRENT 100 mA FEATURES IDEALLY SUITED FOR AUTOMATIC INSERTION FOR SWITCHING AND AF AMPLIFIER APPLICATIONS NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC =100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA

 8.124. Size:2177K  wpmtek
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC847BU3
BC847BU3

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

 8.125. Size:1237K  cn yongyutai
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

BC846/7/8 TRANSI STOR (NPN)BC846BC847BC848Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848Collector-Emitter Voltage 6

 8.126. Size:553K  cn zre
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

BC846/BC847/BC848 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC846A=1A BC846B=1B Small Outline Plastic PackageBC847A=

 8.127. Size:3444K  cn twgmc
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC847BU3
BC847BU3

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

 8.128. Size:611K  cn yangzhou yangjie elec
bc847bs.pdf

BC847BU3
BC847BU3

RoHS COMPLIANT BC847BSDual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:1C Equivalent circuit 1 / 5 S-S2531 Yangzhou Y

 8.129. Size:303K  cn yangzhou yangjie elec
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

RoHS RoHSCOMPLIANT COMPLIANTBC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage 80 BC84

 8.130. Size:211K  cn yangzhou yangjie elec
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf

BC847BU3
BC847BU3

RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J

 8.131. Size:302K  cn yangzhou yangjie elec
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC847BU3
BC847BU3

RoHS RoHSCOMPLIANT COMPLIANTBC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL

 8.132. Size:455K  cn doeshare
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847BU3
BC847BU3

BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE:

 8.133. Size:158K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf

BC847BU3
BC847BU3

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846BC847BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B,BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

 8.134. Size:221K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847BU3
BC847BU3

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC846/847/848MAXIMUM RATINGS Characteristic Symbol Unit(BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter VoltageV 65 45 30 VdcCEOCollector-Base VoltageV 80 50 30 VdcCBOEmitter-Base Voltage

 8.135. Size:586K  cn hottech
bc847a bc847b bc847c.pdf

BC847BU3
BC847BU3

BC847BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC857 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

 8.136. Size:255K  cn hottech
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847BU3
BC847BU3

Plastic-Encapsulate TransistorsFEATURES(NPN)BC846A/BFor general AF applications(NPN)BC847A/B/CHigh collector current(NPN)BC848A/B/CHigh current gainLow collector-emitter saturation voltageMarkingBC846A BC846B BC847A BC847B1A 1B 1E 1FBC847C BC848A BC848B BC848C1. BASE2. EMITTER SOT-231G 1J 1K 1L3. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Par

 8.137. Size:2559K  cn xch
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847BU3
BC847BU3

BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsSOT-23A Dim Min MaxDEVICE MARKING CA 0.37 0.51BC846A=1A; BC846B=1B; B C B1.20 1.40BC847A=1E; BC847B=1F; BC847C=1G; C2.30 2.50TOP VIEWB EBC848A=1J; BC848B=1K: BC848C=1LD0.89 1.03D E

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , BC546 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
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