2SB806-KR Todos los transistores

 

2SB806-KR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB806-KR
   Código: KR
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 75(typ) MHz
   Capacitancia de salida (Cc): 14 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar 2SB806-KR

 

2SB806-KR Datasheet (PDF)

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2sb806-kr 2sb806-kq 2sb806-kp.pdf

2SB806-KR

 8.1. Size:234K  nec
2sb805 2sb806.pdf

2SB806-KR
2SB806-KR

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2sb806.pdf

2SB806-KR
2SB806-KR

SMD Type TransistorsSMD TypePNP Transistors2SB806 Features Classification of hfe(1)1.70 0.1 High collector to emitter voltage: VCEO -120V. =0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VC

 9.1. Size:211K  nec
2sb800.pdf

2SB806-KR
2SB806-KR

 9.2. Size:222K  nec
2sb804.pdf

2SB806-KR
2SB806-KR

 9.3. Size:1087K  kexin
2sb800.pdf

2SB806-KR
2SB806-KR

SMD Type TransistorsPNP Transistors2SB8001.70 0.1 Features High Collector to Emitter Voltage:VCEO>-80V Complement to 2SD10010.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Curr

 9.4. Size:861K  kexin
2sb805.pdf

2SB806-KR
2SB806-KR

SMD Type TransistorsSMD TypePNP Transistors2SB8051.70 0.1FeaturesHigh collector to emitter voltage: VCEO -100V.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -100 VCollector-emitter voltage VCEO -100 VEmitter-base voltage VEBO -5 VCollector current IC -0.7 ACollector current

 9.5. Size:1121K  kexin
2sb804.pdf

2SB806-KR
2SB806-KR

SMD Type TransistorsPNP Transistors2SB804 Features1.70 0.1 World standard miniature package: SOT-89 High collector to base voltage:VCBO -100V Excell DC Current gain linearity.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25 Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector

 9.6. Size:633K  cn shikues
2sb804aw 2sb804av 2sb804au.pdf

2SB806-KR

 9.7. Size:652K  cn shikues
2sb805km 2sb805kl 2sb805kk.pdf

2SB806-KR

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC4428 | 2T637A-2

 

 
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History: 2SC4428 | 2T637A-2

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