2SB806-KR Datasheet and Replacement
Type Designator: 2SB806-KR
SMD Transistor Code: KR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75(typ) MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT89
2SB806-KR Substitution
2SB806-KR Datasheet (PDF)
2sb806.pdf
SMD Type TransistorsSMD TypePNP Transistors2SB806 Features Classification of hfe(1)1.70 0.1 High collector to emitter voltage: VCEO -120V. =0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VC
Datasheet: 2SB1115-YK , 2SB1115-YL , 2SB1115-YM , 2SB1386P , 2SB1386Q , 2SB1386R , 2SB806-KP , 2SB806-KQ , 2SC828 , 2SC2712-LG , 2SC2712-LL , 2SC2712-LO , 2SC2712-LY , 2SC2873O , 2SC2873Y , 2SC2884Y , 2SC3356K-B .
Keywords - 2SB806-KR transistor datasheet
2SB806-KR cross reference
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