2SB806-KR Datasheet. Specs and Replacement

Type Designator: 2SB806-KR

SMD Transistor Code: KR

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 typ MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT89

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2SB806-KR datasheet

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2SB806-KR

SMD Type Transistors SMD Type PNP Tr ansistors 2SB806 Features Classification of hfe(1) 1.70 0.1 High collector to emitter voltage VCEO -120V. = 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V C... See More ⇒

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Detailed specifications: 2SB1115-YK, 2SB1115-YL, 2SB1115-YM, 2SB1386P, 2SB1386Q, 2SB1386R, 2SB806-KP, 2SB806-KQ, 2SC2383, 2SC2712-LG, 2SC2712-LL, 2SC2712-LO, 2SC2712-LY, 2SC2873O, 2SC2873Y, 2SC2884Y, 2SC3356K-B

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