2SD965-R Todos los transistores

 

2SD965-R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD965-R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.75 W
   Tensión colector-base (Vcb): 42 V
   Tensión colector-emisor (Vce): 22 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150(typ) MHz
   Capacitancia de salida (Cc): 50(max) pF
   Ganancia de corriente contínua (hfe): 340
   Paquete / Cubierta: SOT89
 

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2SD965-R Datasheet (PDF)

 ..1. Size:2082K  cn shikues
2sd965-r 2sd965-s.pdf pdf_icon

2SD965-R

2SD965TRANSISTOR (NPN) SOT-89FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D: 965MARKINGMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base

 7.1. Size:176K  tysemi
2sd965-q.pdf pdf_icon

2SD965-R

Product specification2SD965-QUnit:mmSOT-891.50 0.14.500.11.800.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3the low-voltage power supply.0.440.10.480.1 0.530.13.000.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

 8.1. Size:39K  panasonic
2sd965.pdf pdf_icon

2SD965-R

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

 8.2. Size:43K  panasonic
2sd965 e.pdf pdf_icon

2SD965-R

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SC1984A | OC883 | LBC848BPDW1T3G | BSS82BL | D38S2 | 2SD1781K-Q | LDTA114EET1G

 

 
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