All Transistors. 2SD965-R Datasheet

 

2SD965-R Datasheet and Replacement


   Type Designator: 2SD965-R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 42 V
   Maximum Collector-Emitter Voltage |Vce|: 22 V
   Maximum Emitter-Base Voltage |Veb|: 7.5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150(typ) MHz
   Collector Capacitance (Cc): 50(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 340
   Noise Figure, dB: -
   Package: SOT89
 

 2SD965-R Substitution

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2SD965-R Datasheet (PDF)

 ..1. Size:2082K  cn shikues
2sd965-r 2sd965-s.pdf pdf_icon

2SD965-R

2SD965TRANSISTOR (NPN) SOT-89FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D: 965MARKINGMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base

 7.1. Size:176K  tysemi
2sd965-q.pdf pdf_icon

2SD965-R

Product specification2SD965-QUnit:mmSOT-891.50 0.14.500.11.800.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3the low-voltage power supply.0.440.10.480.1 0.530.13.000.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

 8.1. Size:39K  panasonic
2sd965.pdf pdf_icon

2SD965-R

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

 8.2. Size:43K  panasonic
2sd965 e.pdf pdf_icon

2SD965-R

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

Datasheet: 2SD1781K-R , 2SD1898Q , 2SD1898R , 2SD2150R , 2SD2150S , 2SD874A-Q , 2SD874A-R , 2SD874A-S , A733 , 2SD965-S , A1015H , A1015L , B722S-E , B722S-P , B722S-Q , B722S-R , B772GR .

Keywords - 2SD965-R transistor datasheet

 2SD965-R cross reference
 2SD965-R equivalent finder
 2SD965-R lookup
 2SD965-R substitution
 2SD965-R replacement

 

 
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