A1015L Todos los transistores

 ..1. Size:1309K  slkor
 a1015l.pdf

A1015 PNP Silicon Epitaxial Planar Transistor SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collecto

 ..2. Size:1041K  cn shikues
 a1015l a1015h.pdf

 0.1. Size:228K  toshiba
 2sa1015l.pdf

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit mm Low Noise Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

 0.2. Size:166K  wietron
 a1015lt1.pdf

A1015LT1 A1015LT1 TRANSISTOR (PNP) * G Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM -0.15 A Collector-base voltage V(BR)CBO -50 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless

 0.3. Size:151K  semtech
 2sa1015o 2sa1015y 2sa1015g 2sa1015l.pdf

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

 0.4. Size:145K  china
 2sa1015lt1.pdf

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SC1815 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN 1 2 3 Emitter-Base Voltage Vebo -5 V

 0.5. Size:545K  umw-ic
 2sa1015l 2sa1015h.pdf

R UMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) 2SA1015 MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emit