A1015L Datasheet, Equivalent, Cross Reference Search
Type Designator: A1015L
SMD Transistor Code: BA
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT23
A1015L Transistor Equivalent Substitute - Cross-Reference Search
A1015L Datasheet (PDF)
a1015l.pdf
A1015PNP Silicon Epitaxial Planar TransistorSOT-23 FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collecto
2sa1015l.pdf
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)
a1015lt1.pdf
A1015LT1 A1015LT1 TRANSISTOR (PNP) * G Lead(Pb)-FreeSOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless
2sa1015o 2sa1015y 2sa1015g 2sa1015l.pdf
2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit
2sa1015lt1.pdf
SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3Emitter-Base Voltage Vebo -5 V
2sa1015l 2sa1015h.pdf
RUMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)2SA1015MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
