SS8050W-J Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SS8050W-J  📄📄 

Código: Y1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT323

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SS8050W-J datasheet

 ..1. Size:780K  cn shikues
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SS8050W-J

SS8050W SS8050W TRANSISTOR (NPN) FEATURES Complimentary to SS8550W MARKING Y1 SOT 323 3. COLLECTOR 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0

 ..2. Size:9568K  cn twgmc
 ss8050w-l ss8050w-h ss8050w-j.pdf pdf_icon

SS8050W-J

SS8050W SS8050W SS8050W SS8050W TRANSISTOR(NPN) SS8 0 50 W SOT 323 3 FEATURES Complimentary to SS8550W 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Co

 6.1. Size:286K  mcc
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SS8050W-J

MMSS8050W-L MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050W-H CA 91311 Phone (818) 701-4933 MMSS8050W-J Fax (818) 701-4939 Features SOT-323 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 4

 7.1. Size:258K  secos
 ss8050w.pdf pdf_icon

SS8050W-J

SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO 40 V S To

MOSTRAR MÁS

Otros transistores... PXT8550C, PXT8550D, S8050H, S8050L, S9012L, S9014T-H, S9014T-L, SS8050W-H, MPSA42, SS8050W-L, SXT5401, SXT5551, SZT560A, 13001S, 2SA812M8, 2SB1132-P, 2SB1132-Q