SS30101-P Todos los transistores

 

SS30101-P Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SS30101-P

Código: KEY

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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SS30101-P datasheet

 ..1. Size:809K  slkor
ss30101-q ss30101-p.pdf pdf_icon

SS30101-P

SS30101-Q SS30101 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to SS30101 MARKING KEY 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Value Unit Symbo1 Collector-Base Voltage V V CBO 50 Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V V

 7.1. Size:125K  diodes
dss30101l.pdf pdf_icon

SS30101-P

DSS30101L LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Ideal for Medium Power Amplification and Switching Case SOT-23 Ultra Low Collector-Emitter Saturation Voltage Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Moisture Sensi

 8.1. Size:107K  onsemi
nss30100lt1g.pdf pdf_icon

SS30101-P

NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is important.

 9.1. Size:128K  philips
pbss301pd.pdf pdf_icon

SS30101-P

PBSS301PD 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 03 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301ND. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

Otros transistores... SL3904 , SL3904T , SL3906 , SL3906T , SL44H11 , SL493TA , SL5304DCP , SL5304I , 2N5401 , SS30101-Q , SS8050-H , SS8050-J , SS8050-L , 2KW8629 , 2SA1141Q , 2SA1141R , 2SA1232R .

 

 

 


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