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SS30101-P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SS30101-P
   Código: KEY
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23
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SS30101-P Datasheet (PDF)

 ..1. Size:809K  slkor
ss30101-q ss30101-p.pdf pdf_icon

SS30101-P

SS30101-QSS30101 TRANSISTOR (NPN)FEATURESSOT-23Complimentary to SS30101MARKING: KEY 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (T =25 unless otherwise noted)aParameter Value Unit Symbo1 Collector-Base VoltageV VCBO 50Collector-Emitter VoltageV 40 VCEOEmitter-Base VoltageVV

 7.1. Size:125K  diodes
dss30101l.pdf pdf_icon

SS30101-P

DSS30101LLOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Ideal for Medium Power Amplification and Switching Case: SOT-23 Ultra Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Moisture Sensi

 8.1. Size:107K  onsemi
nss30100lt1g.pdf pdf_icon

SS30101-P

NSS30100LT1G30 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is important.

 9.1. Size:128K  philips
pbss301pd.pdf pdf_icon

SS30101-P

PBSS301PD20 V, 4 A PNP low VCEsat (BISS) transistorRev. 03 17 December 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301ND.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

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