SS30101-P PDF and Equivalents Search

 

SS30101-P Specs and Replacement

Type Designator: SS30101-P

SMD Transistor Code: KEY

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

 SS30101-P Substitution

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SS30101-P datasheet

 ..1. Size:809K  slkor

ss30101-q ss30101-p.pdf pdf_icon

SS30101-P

SS30101-Q SS30101 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to SS30101 MARKING KEY 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Value Unit Symbo1 Collector-Base Voltage V V CBO 50 Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V V... See More ⇒

 7.1. Size:125K  diodes

dss30101l.pdf pdf_icon

SS30101-P

DSS30101L LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Ideal for Medium Power Amplification and Switching Case SOT-23 Ultra Low Collector-Emitter Saturation Voltage Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Moisture Sensi... See More ⇒

 8.1. Size:107K  onsemi

nss30100lt1g.pdf pdf_icon

SS30101-P

NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is important. ... See More ⇒

 9.1. Size:128K  philips

pbss301pd.pdf pdf_icon

SS30101-P

PBSS301PD 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 03 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301ND. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit... See More ⇒

Detailed specifications: SL3904 , SL3904T , SL3906 , SL3906T , SL44H11 , SL493TA , SL5304DCP , SL5304I , 2N5401 , SS30101-Q , SS8050-H , SS8050-J , SS8050-L , 2KW8629 , 2SA1141Q , 2SA1141R , 2SA1232R .

History: SL5304DCP | S9014T-H

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History: SL5304DCP | S9014T-H

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