SS30101-P - Даташиты. Аналоги. Основные параметры

SS30101-Q SS30101 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to SS30101 MARKING KEY 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Value Unit Symbo1 Collector-Base Voltage V V CBO 50 Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V V

DSS30101L LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Ideal for Medium Power Amplification and Switching Case SOT-23 Ultra Low Collector-Emitter Saturation Voltage Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Moisture Sensi

NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is important.

PBSS301PD 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 03 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301ND. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 03 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PD. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

PBSS301NX 12 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS301PZ 12 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS301PX 12 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301NX. 1.2 Features Low collector-emitter saturation voltage VCEsa

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain