2SC3181O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3181O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 typ MHz
Capacitancia de salida (Cc): 190 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO3PI
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2SC3181O datasheet
2sc3181r 2sc3181o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3181.pdf
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2sc3181n.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sc3181.pdf
isc Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage appl
Otros transistores... 2SC2334L, 2SC2334M, 2SC2517K, 2SC2517L, 2SC2517M, 2SC3157K, 2SC3157L, 2SC3157M, 2SD313, 2SC3181R, 2SC3834G, 2SC3834O, 2SC3834Y, 2SC3835G, 2SC3835O, 2SC3835Y, 2SC3856O
History: 2SC3181R
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