All Transistors. 2SC3181O Datasheet

 

2SC3181O Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3181O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30(typ) MHz
   Collector Capacitance (Cc): 190 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3PI

 2SC3181O Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3181O Datasheet (PDF)

 ..1. Size:178K  cn sptech
2sc3181r 2sc3181o.pdf

2SC3181O
2SC3181O

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 7.1. Size:90K  toshiba
2sc3181.pdf

2SC3181O
2SC3181O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 7.2. Size:195K  jmnic
2sc3181n.pdf

2SC3181O
2SC3181O

JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 7.3. Size:203K  inchange semiconductor
2sc3181.pdf

2SC3181O
2SC3181O

isc Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage appl

 7.4. Size:161K  inchange semiconductor
2sc3181n.pdf

2SC3181O
2SC3181O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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