2SC3835G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3835G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 110 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de transistor bipolar 2SC3835G
2SC3835G Datasheet (PDF)
2sc3835g.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFEAPPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS
2sc3835.pdf
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UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1TO-3PN1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL RATING UNITCollector-Base Voltage VCBO 200 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage VEBO 8 VBase Current IB 3 ACollector Current 7 A
2sc3835.pdf
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Product Specification www.jmnic.comSilicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO
2sc3835.pdf
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2SC3835Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings UnitUnit Symbol Conditions Ratings0.24.80.415.6VCBO 200 VCB=200V 100max A 0.1V ICBO9.6 2.0VCEO 120 IEBO
2sc3835t4tl.pdf
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2SC3835T4TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
2sc3835.pdf
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isc Silicon NPN Power Transistor 2SC3835DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose appl
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