2SC3835G Datasheet. Specs and Replacement
Type Designator: 2SC3835G 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 110 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO3PN
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2SC3835G datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8 V Base Current IB 3 A Collector Current 7 A ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO... See More ⇒
Detailed specifications: 2SC3157K, 2SC3157L, 2SC3157M, 2SC3181O, 2SC3181R, 2SC3834G, 2SC3834O, 2SC3834Y, 9014, 2SC3835O, 2SC3835Y, 2SC3856O, 2SC3856P, 2SC3856Y, 2SC4467O, 2SC4467P, 2SC4467Y
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