2SC3856P Todos los transistores

 

2SC3856P Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3856P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 130 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 180 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20(typ) MHz
   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO3PN
 

 Búsqueda de reemplazo de 2SC3856P

   - Selección ⓘ de transistores por parámetros

 

2SC3856P PDF detailed specifications

 ..1. Size:430K  cn sptech
2sc3856o 2sc3856p 2sc3856y.pdf pdf_icon

2SC3856P

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector... See More ⇒

 7.1. Size:179K  jmnic
2sc3856.pdf pdf_icon

2SC3856P

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒

 7.2. Size:24K  sanken-ele
2sc3856.pdf pdf_icon

2SC3856P

2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC3856 Unit Conditions 2SC3856 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 200 V VCB=200V 100max A 9.6 2.0 IEBO VCEO 180 V VEB=6V 100max... See More ⇒

 7.3. Size:1824K  cn sps
2sc3856t4tl.pdf pdf_icon

2SC3856P

2SC3856T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 180 V CEO V E... See More ⇒

Otros transistores... 2SC3181R , 2SC3834G , 2SC3834O , 2SC3834Y , 2SC3835G , 2SC3835O , 2SC3835Y , 2SC3856O , A1013 , 2SC3856Y , 2SC4467O , 2SC4467P , 2SC4467Y , 2SC4550K , 2SC4550L , 2SC4550M , 2SC4552K .

 

 
Back to Top

 


 
.