2SC3856P
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3856P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130
W
Maximum Collector-Base Voltage |Vcb|: 200
V
Maximum Collector-Emitter Voltage |Vce|: 180
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 20(typ)
MHz
Collector Capacitance (Cc): 300
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
TO3PN
2SC3856P
Transistor Equivalent Substitute - Cross-Reference Search
2SC3856P
Datasheet (PDF)
..1. Size:430K cn sptech
2sc3856o 2sc3856p 2sc3856y.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector
7.1. Size:179K jmnic
2sc3856.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
7.2. Size:24K sanken-ele
2sc3856.pdf
2SC3856Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC3856 Unit Conditions 2SC3856 Unit0.24.80.415.6ICBO 0.1VCBO 200 V VCB=200V 100max A 9.6 2.0IEBOVCEO 180 V VEB=6V 100max
7.3. Size:1824K cn sps
2sc3856t4tl.pdf
2SC3856T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 180 VCEOV E
7.4. Size:217K inchange semiconductor
2sc3856.pdf
isc Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.