MJW0302A Todos los transistores

 

MJW0302A Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJW0302A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO3PN
 

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Principales características: MJW0302A

 ..1. Size:67K  onsemi
mjw0281a mjw0302a.pdf pdf_icon

MJW0302A

MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW3281A and MJW1302A audio output transistors. With superior gain linearity and safe operating area performance, these http //onsemi.com transistors are ideal for high fidelity audio amplifier output stages and other linea

 ..2. Size:862K  cn sptech
mjw0302a.pdf pdf_icon

MJW0302A

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJW0302A DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 0.1. Size:1718K  cn sps
mjw0302at4tl.pdf pdf_icon

MJW0302A

MJW0302AT4TL DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -250 V CBO V Collector-Emitter

 7.1. Size:969K  cn sptech
mjw0302g.pdf pdf_icon

MJW0302A

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJW0302G DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0281G APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

Otros transistores... 2SC5197R , 2SC5198O , 2SC5198R , 2SC5200O , 2SC5200R , 2SC6104 , 2SD1047D , MJW0281A , 2SC2383 , MJW0302G , MN1526O , MN1526P , MN1526R , MP1526O , MP1526P , MP1526R , ST13003-K .

History: NA41U | MMBTA92LT1 | HSA1037AKQ

 

 
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