2SC3856T4TL. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SC3856T4TL Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3856T4TL

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 130 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 180 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 typ MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO3PN

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2SC3856T4TL datasheet

..1. Size:1824K cn sps
2sc3856t4tl.pdf pdf_icon

2SC3856T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 180 V CEO V E

7.1. Size:179K jmnic
2sc3856.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

7.2. Size:24K sanken-ele
2sc3856.pdf pdf_icon

2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC3856 Unit Conditions 2SC3856 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 200 V VCB=200V 100max A 9.6 2.0 IEBO VCEO 180 V VEB=6V 100max

7.3. Size:430K cn sptech
2sc3856o 2sc3856p 2sc3856y.pdf pdf_icon

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector

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2SC3856T4TL Todos los transistores