2SC3856T4TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3856T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 180 VCEOV E

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SC3856Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC3856 Unit Conditions 2SC3856 Unit0.24.80.415.6ICBO 0.1VCBO 200 V VCB=200V 100max A 9.6 2.0IEBOVCEO 180 V VEB=6V 100max

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector

isc Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE