All Transistors. 2SC3856T4TL Datasheet

 

2SC3856T4TL Datasheet and Replacement


   Type Designator: 2SC3856T4TL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20(typ) MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3PN
 

 2SC3856T4TL Substitution

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2SC3856T4TL Datasheet (PDF)

 ..1. Size:1824K  cn sps
 2sc3856t4tl.pdf pdf_icon

2SC3856T4TL

2SC3856T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 180 VCEOV E

 7.1. Size:179K  jmnic
 2sc3856.pdf pdf_icon

2SC3856T4TL

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 7.2. Size:24K  sanken-ele
 2sc3856.pdf pdf_icon

2SC3856T4TL

2SC3856Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC3856 Unit Conditions 2SC3856 Unit0.24.80.415.6ICBO 0.1VCBO 200 V VCB=200V 100max A 9.6 2.0IEBOVCEO 180 V VEB=6V 100max

 7.3. Size:430K  cn sptech
 2sc3856o 2sc3856p 2sc3856y.pdf pdf_icon

2SC3856T4TL

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector

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Datasheet: 2SA1943T7TL , 2SA940T1TL , 2SC2073T1TL , 2SC2246T3BL , 2SC2625T4TL , 2SC3320T4TL , 2SC3834T1TL , 2SC3835T4TL , BD140 , 2SC3907T4TL , 2SC3997T7TL , 2SC3998T7TL , 2SC4110T4TL , 2SC4131T5TL , 2SC4237T8TL , 2SC4552T2TL , 2SC5027T1TL .

History: BCAP79 | 3DG2235 | FB2060A | BUXD87T4

Keywords - 2SC3856T4TL transistor datasheet

 2SC3856T4TL cross reference
 2SC3856T4TL equivalent finder
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 2SC3856T4TL replacement

 

 
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