2SC5570T7TL Todos los transistores

 ..1. Size:1278K  cn sps
 2sc5570t7tl.pdf

2SC5570T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector

 7.1. Size:349K  toshiba
 2sc5570.pdf

2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT C

 7.2. Size:420K  cn sptech
 2sc5570.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5570 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba

 8.1. Size:40K  sanyo
 2sc5577.pdf

Ordering number ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5577] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.

 8.2. Size:40K  sanyo
 2sc5578.pdf

Ordering number ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5578] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Base

 8.3. Size:52K  rohm
 2sc5574.pdf

2SC5574 Transistors Power Transistor (80V, 4A) 2SC5574 Features External dimensions (Units mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 10.0 4.5 2) Excellent DC current gain characteristics. 3.2 2.8 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SA2017. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (

 8.4. Size:49K  rohm
 2sc5576.pdf

2SC5576 Transisitors Medium Power Transistor (Motor or Relay drive) (60 10V, 4A) 2SC5576 Features Circuit diagram 1) Built-in zener diode between collector and base. C 2) Strong protection against reverse power surges due to "L" loads. B 3) Built-in resistor between base and emitter. 4) Built-in damper diode. R1 R2 E B Base R1 4.5k C Collector R2 300 E Emitter

 8.5. Size:52K  rohm
 2sc5575.pdf

2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 Features External dimensions (Units mm) 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf Typ. 0.18 s at IC = 5A) 3) Wide SOA. (safe operating area) 10.0 4.5 3.2 2.8 Absolute maximum ratings (Ta = 25 C) 1.2 1.3 Parameter Symbol Limits Unit 0.8 Collecto

 8.6. Size:71K  panasonic
 2sc5572.pdf