Биполярный транзистор 2SC5570T7TL - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5570T7TL
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 220 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 28 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: TO3PL
Аналоги (замена) для 2SC5570T7TL
2SC5570T7TL Datasheet (PDF)
2sc5570t7tl.pdf
2SC5570T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector
2sc5570.pdf
2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) fMAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITC
2sc5570.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5570DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba
2sc5577.pdf
Ordering number:ENN6281NPN Triple Diffused Planar Silicon Transistor2SC5577Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5577] Adoption of MBIT process.20.0 3.35.02.03.40.
2sc5578.pdf
Ordering number:ENN6297NPN Triple Diffused Planar Silicon Transistor2SC5578Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5578] Adoption of MBIT process.20.0 3.35.02.03.40.61.21 : Base
2sc5574.pdf
2SC5574TransistorsPower Transistor (80V, 4A)2SC5574 Features External dimensions (Units : mm)1) Low saturation voltage.(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A)10.0 4.52) Excellent DC current gain characteristics.3.2 2.8 3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).1.21.35) Complements the 2SA2017.0.80.752.54 2.54 2.6(1) (2) (3)( )(1) (
2sc5576.pdf
2SC5576TransisitorsMedium Power Transistor(Motor or Relay drive) (6010V, 4A)2SC5576 Features Circuit diagram1) Built-in zener diode between collector and base.C2) Strong protection against reverse power surges due to "L" loads.B3) Built-in resistor between base and emitter.4) Built-in damper diode.R1 R2EB : BaseR1 4.5kC : Collector R2 300E : Emitter
2sc5575.pdf
2SC5575TransistorsHigh-voltage Switching Transisitor(Power Supply) (120V, 7A)2SC5575 Features External dimensions (Units : mm)1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A)2) Fast switching. (tf : Typ. 0.18s at IC = 5A)3) Wide SOA. (safe operating area)10.0 4.53.2 2.8 Absolute maximum ratings (Ta = 25C)1.21.3Parameter Symbol Limits Unit0.8Collecto
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