2SC5570T7TL PDF and Equivalents Search

 ..1. Size:1278K  cn sps

 2sc5570t7tl.pdf

2SC5570T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector... See More ⇒

 7.1. Size:349K  toshiba

 2sc5570.pdf

2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT C... See More ⇒

 7.2. Size:420K  cn sptech

 2sc5570.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5570 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba... See More ⇒

 8.1. Size:40K  sanyo

 2sc5577.pdf

Ordering number ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5577] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.... See More ⇒

 8.2. Size:40K  sanyo

 2sc5578.pdf

Ordering number ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5578] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Base ... See More ⇒

 8.3. Size:52K  rohm

 2sc5574.pdf

2SC5574 Transistors Power Transistor (80V, 4A) 2SC5574 Features External dimensions (Units mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 10.0 4.5 2) Excellent DC current gain characteristics. 3.2 2.8 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SA2017. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (... See More ⇒

 8.4. Size:49K  rohm

 2sc5576.pdf

2SC5576 Transisitors Medium Power Transistor (Motor or Relay drive) (60 10V, 4A) 2SC5576 Features Circuit diagram 1) Built-in zener diode between collector and base. C 2) Strong protection against reverse power surges due to "L" loads. B 3) Built-in resistor between base and emitter. 4) Built-in damper diode. R1 R2 E B Base R1 4.5k C Collector R2 300 E Emitter... See More ⇒

 8.5. Size:52K  rohm

 2sc5575.pdf

2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 Features External dimensions (Units mm) 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf Typ. 0.18 s at IC = 5A) 3) Wide SOA. (safe operating area) 10.0 4.5 3.2 2.8 Absolute maximum ratings (Ta = 25 C) 1.2 1.3 Parameter Symbol Limits Unit 0.8 Collecto... See More ⇒

 8.6. Size:71K  panasonic

 2sc5572.pdf

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